FDT439N by onsemi Datasheet | DigiKey

FDT439N Datasheet by onsemi

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FDT439N
©1999 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
FDT439N
N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
General Description
This N-Channel Enhancement mode field effect transistor
is produced using Fairchild Semiconductor's proprietary,
high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-
state resistance, and provide superior switching
performance. These products are well suited to low
voltage, low current applications such as notebook
computer power management, battery powered
circuits, and DC motor control.
Applications
DC/DC converter
Load switch
Motor driving
June 1999
Features
6.3 A, 30 V. RDS(on) = 0.045 Ω @ VGS = 4.5 V
RDS(on) = 0.058 Ω @ VGS = 2.5 V
Fast switching speed.
High power and current handling capabitlity in a
widely used surface mount package.
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter FDT439N Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±8V
IDDrain Current - Continuous (Note 1a) 6.3 A
- Pulsed 20
PDPower Dissipation for Single Operation (Note 1a) 3W
(Note 1b) 1.3
(Note 1c) 1.1
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDT439N FDT439N 13’’ 12mm 2500 units
G
D
S
D
SOT-223
D
DS
G
G
D
S
SOT-223
*
(J23Z)
D
S
G
Publication Order Number:
FDT439N/D
ABVDM‘ AVuw G: D U~
FDT439N
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2
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA30 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C40 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA0.4 0.67 1 V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient ID = 250 µA, Referenced to 25°C-2.2 mV/°C
RDS(on) Static Drain-Source
On-Resistance VGS = 4.5 V, ID = 6.3 A
VGS = 4.5 V, ID = 6.3 A, TJ=125°C
VGS = 2.5 V, ID = 5.5A
0.038
0.055
0.048
0.045
0.072
0.058
Ω
ID(on) On-State Drain Current VGS = 4.5 V, VDS = 5 V 10 A
gFS Forward Transconductance VDS = 5 V, ID = 6.3 A 17 S
Dynamic Characteristics
Ciss Input Capacitance 500 pF
Coss Output Capacitance 185 pF
Crss Reverse Transfer Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
43 pF
Switching Characteristics (Note 2)
td(on) Turn-On Delay Time 6 12 ns
trTurn-On Rise Time 10 18 ns
td(off) Turn-Off Delay Time 30 48 ns
tfTurn-Off Fall Time
VDD = 15 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 Ω
10 18 ns
QgTotal Gate Charge 10.7 15 nC
Qgs Gate-Source Charge 0.9 nC
Qgd Gate-Drain Charge
VDS = 15 V, ID = 6.3 A,
VGS = 4.5 V,
3.7 nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current 2.5 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A (Note 2) 0.8 1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
a) 42° C/W when
mounted on a 1 in2
pad of 2 oz. copper.
b) 95° C/W when
mounted on a 0.066 in2
pad of 2 oz. copper.
c) 110° C/W when
mounted on a minimum
mounting pad.
FDT439N
Typical Characteristics
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-To-Source Voltage.
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 6.3A
V
GS
= 4.5V
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
12345
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 3.2A
T
A
= 125
o
C
T
A
= 25
o
C
0.8
1
1.2
1.4
1.6
1.8
2
0 4 8 121620
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 2.0V
2.5V
3.0V 3.5V 4.5V
0
4
8
12
16
20
01234
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
= 4.5V
3.0V 2.5V
2.0V
1.5V
0
4
8
12
16
20
00.511.522.53
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
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3
FDT439N
Typical Characteristics (continued)
Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient themal response will change depending on the circuit board design.
0.0001 0.001 0.01 0.1 1 10 100 300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1 2
R (t) = r(t) * R
R = 110°C/W
T - T = P * R (t)
A
J
P(pk)
t
1 t
2
θJA
θJA
θJA
θJA
0.01
0.1
1
10
100
0.1 1 10 100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
1s100ms
10ms
1ms
100
µ
s
R
DS(ON)
LIMIT
V
GS
= 4.5V
SINGLE PULSE
R
θJA
= 110
o
C/W
T
A
= 25
o
C
10s
0
1
2
3
4
5
024681012
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 6.3A V
DS
= 5V 10V
15V
0
300
600
900
1200
1500
0 5 10 15 20 25 30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10 100 1000
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
R
θJA
= 110
o
C/W
T
A
= 25
o
C
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4
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