FDS6990AS

Dual N-Channel PowerTrench^® SyncFET™, 30V, 7.5A, 22mΩ

Overview

The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low R_DS(ON) and low gate charge. Each MOSFET includes integrated Schottky diodes using a monolithic SyncFET technology. The performance of the FDS6990AS as the low-side switch in a synchronous rectifier is similar to the performance of the FDS6990A in parallel with a Schottky diode.

Applications

This product is general usage and suitable for many different applications.
DC/DC Converters
Motor Drives

Features

7.5A, 30V
R_DS(ON) = 22 mΩ @ V_GS = 10V
R_DS(ON) = 28 mΩ @ V_GS = 4.5V
Includes SyncFET Schottky body diode
Low gate charge (10nC typical)
High performance trench technology for extremely low R_DS(ON)
High power and current handling capability

Material Composition

Product Change Notification

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Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDS6990AS

Last Shipments

SOIC-8

751EB

260

REEL

2500

N-Channel

Dual

7.5

Q1=Q2=28

Q1=Q2=22

550

Price N/A

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MOSFETs | FDS6990AS

Dual N-Channel PowerTrench® SyncFET™, 30V, 7.5A, 22mΩ

Overview

Availability & Samples (size)

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Dual N-Channel PowerTrench^® SyncFET™, 30V, 7.5A, 22mΩ