General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features
• Q1: N-Channel
    6.2A, 40V RDS(on) = 29mΩ @ VGS = 10V RDS(on) = 36mΩ @ VGS = 4.5V
• Q2: P-Channel
    –4.4A, –40V RDS(on) = 46mΩ @ VGS = –10V RDS(on) = 63mΩ @ VGS = –4.5V
• High power handling capability in a widely used surface mount package
• RoHS compliant

Application
• Inverter
• Power Supplies