Details, datasheet, quote on part number: FDP603AL
| Part | FDP603AL |
| Category | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description | N-channel Logic Level Enhancement Mode Field Effect Transistor |
| Company | Fairchild Semiconductor |
| Datasheet | Download FDP603AL Datasheet |
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| Features, Applications |
/ FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features30 V. RDS(ON) VGS=10 V RDS(ON) VGS=4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175�C maximum junction temperature rating. Symbol VDSS VGSS ID PD Parameter Drain-Source VoltageGate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Total Power Dissipation = 25�C Derate above 25�C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds THERMAL CHARACTERISTICS RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 3 62.5 �C/W DRAIN-SOURCE AVALANCHE RATINGS (Note 1) W DSS IAR BVDSS Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD mJ A OFF CHARACTERISTICS Drain-Source Breakdown Voltage VGS = 250 �A, Referenced 25 C VDS 24 V, VGS 0 V VGS 20 V, VDS 0 V VGS -20 V, VDS 0 V VDS = VGS, = 250 �A, Referenced 25 oC VGS =125 �C VGS 10 A ID(on) gFS On-State Drain Current On-State Drain Current Forward Transconductance VGS 10 V, VDS 10 V VGS 4.5 V, VDS 10 V VDS 25 A VDS 15 V, VGS = 1.0 MHz A S IDSS IGSSF IGSSR VGS(th) Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Voltage Gate Threshold Voltage Temp.Coefficient Static Drain-Source On-ResistanceInput Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS 25 A Note 1. Pulse Test: Pulse Width < 300 �s, Duty Cycle < 2.0%.Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
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