FDH20N40 by Fairchild Semiconductor | Power Field Effect Transistors (FET) | Partstack

FDH20N40

Fairchild Semiconductor

FDH20N40 by Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 273 W; Maximum Drain Current (Abs) (ID): 20 A; No. of Terminals: 3;

Median Price

-

Lifecycle Status

Discontinued

Suppliers In-Stock

1

In-Stock Inventory

1k+

FDH20N40 by Fairchild Semiconductor
Get datasheet
Compare Share

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Supply Digital

USA . 2,752 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

 2,752

-

-

-

-

Technical Specifications

Power Field Effect Transistors (FET) FDH20N40 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Package Body Material:

PLASTIC/EPOXY

Configuration:

Transistor Element Material:

SILICON

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Transistor Application:

SWITCHING

Maximum Drain Current (ID):

20 A

Maximum Pulsed Drain Current (IDM):

80 A

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

No. of Terminals:

3

Maximum Power Dissipation (Abs):

Terminal Position:

SINGLE

Package Style (Meter):

FLANGE MOUNT

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

Package Shape:

RECTANGULAR

Terminal Form:

THROUGH-HOLE

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Case Connection:

DRAIN

Maximum Drain-Source On Resistance:

.216 ohm

JEDEC-95 Code:

TO-247

Polarity or Channel Type:

Minimum DS Breakdown Voltage:

400 V

Qualification:

Not Qualified

Maximum Drain Current (Abs) (ID):

20 A

Trade Compliance

FDH20N40 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Popular products 20

1N4148 by Rectron

1N4148

Rectron

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MBR130T1G by Onsemi

MBR130T1G

Onsemi

MBR130T1G by Onsemi is a Schottky rectifier diode with max output current of 1A and max repetitive peak reverse voltage of 30V. It operates b/w -65 to 125°C, suitable for surface mount applications in electronics requiring low forward voltage drop.
STM32H753IIT6 by STMicroelectronics

STM32H753IIT6

STMicroelectronics

STM32H753IIT6 by STMicroelectronics is a 32-bit microcontroller with 176 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs and 2-Ch 12-Bit DACs, suitable for industrial applications requiring high-speed data processing and connectivity via CAN, ETHERNET, USB, and more.
DS18B20Z by Dallas Semiconductor

DS18B20Z

Dallas Semiconductor

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Housing: PLASTIC; Maximum Accuracy (Cel): 0.50;
BAV99 by Microsemi

BAV99

Microsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99 by Sangdest Microelectronics (Nanjing)

BAV99

Sangdest Microelectronics (Nanjing)

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99 by Frontier Electronics

BAV99

Frontier Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148 by General Diode

1N4148

General Diode

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;
DS18B20Z+T&R by Maxim Integrated

DS18B20Z+T&R

Maxim Integrated

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Minimum Operating Temperature: -55 Cel; Package Body Material: PLASTIC/EPOXY;
RC0603JR-070RL by Yageo

RC0603JR-070RL

Yageo

Yageo's RC0603JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. Its metal glaze/thick film technology and 0.1 W power dissipation make it ideal for jumper applications in various electronic devices.
MMBT2907ALT1G by Onsemi

MMBT2907ALT1G

Onsemi

MMBT2907ALT1G by Onsemi is a PNP BJT transistor with 100 min hFE, 60V VCEO, and 200MHz fT. Ideal for switching applications, it has a small outline package with Gull Wing terminals and can handle up to 0.6A of collector current.
M39029/58-360 by TE Connectivity

M39029/58-360

TE Connectivity

TE Connectivity's M39029/58-360 is a CRIMP terminal backshell for 22-28 AWG wires, rated at 5A. Ideal for male contacts in Mil-Spec applications, it offers a cross-section area of 0.34 mm2 and ensures secure connections in demanding environments.
BAV99 by SPC TECHNOLOGY/ MULTICOMP

BAV99

SPC TECHNOLOGY/ MULTICOMP

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA by Bytesonic Electronics

SMBJ18CA

Bytesonic Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148 by New Jersey Semiconductor Products

1N4148

New Jersey Semiconductor Products

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
NDT2955 by Fairchild Semiconductor

NDT2955

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (Abs) (ID): 2.5 A;
LL4148 by Good-ark Electronics

LL4148

Good-ark Electronics

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N7002 by Fairchild Semiconductor

2N7002

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BAV99 by Vishay Intertechnology

BAV99

Vishay Intertechnology

Vishay Intertechnology's BAV99 diode features a max forward voltage of 1.3V and a max output current of 0.15A, making it ideal for rectification applications. With a small outline package style and dual terminal position, this series-connected diode is designed for surface mount usage in various electronic circuits with an operating temperature range from -55°C to 150°C.
LL4148GS08 by Temic Semiconductors

LL4148GS08

Temic Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Category top products 20

FDN5618P by Fairchild Semiconductor

FDN5618P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
FQD7P20TM by Onsemi

FQD7P20TM

Onsemi

FQD7P20TM by Onsemi is a P-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 22.8A and EAS of 570mJ, operating in ENHANCEMENT MODE at up to 150°C.
AUIRF7341QTR by Infineon Technologies

AUIRF7341QTR

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; Maximum Pulsed Drain Current (IDM): 42 A; JESD-30 Code: R-PDSO-G8;
SISS71DN-T1-GE3 by Vishay Intertechnology

SISS71DN-T1-GE3

Vishay Intertechnology

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1; Package Shape: SQUARE;
IRLML6402GTRPBF by International Rectifier

IRLML6402GTRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum DS Breakdown Voltage: 20 V; Transistor Application: SWITCHING;
IRF7842TRPBF by Infineon Technologies

IRF7842TRPBF

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; JEDEC-95 Code: MS-012AA; Avalanche Energy Rating (EAS): 50 mJ;
SUM110P06-07L-E3 by Vishay Intertechnology

SUM110P06-07L-E3

Vishay Intertechnology

SUM110P06-07L-E3 by Vishay Intertechnology is a P-channel power FET with a min DS breakdown voltage of 60V. It has a max pulsed drain current of 240A and an avalanche energy rating of 281mJ. This transistor is commonly used for switching applications in electronic circuits.
BSP613PH6327XTSA1 by Infineon Technologies

BSP613PH6327XTSA1

Infineon Technologies

BSP613PH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 11.6A and 0.13 ohm Drain-Source On Resistance, suitable for ENHANCEMENT MODE operation in automotive systems (AEC-Q101).
G3R160MT12J by Genesic Semiconductor

G3R160MT12J

Genesic Semiconductor

Power Field-Effect Transistors;
FDD4685 by Onsemi

FDD4685

Onsemi

FDD4685 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for applications requiring high power dissipation up to 69W. Featuring a max Drain Current of 40A and an Avalanche Energy Rating of 121mJ, it operates in Enhancement Mode for efficient performance in various electronic circuits.
IAUT300N10S5N015ATMA1 by Infineon Technologies

IAUT300N10S5N015ATMA1

Infineon Technologies

Infineon's IAUT300N10S5N015ATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 1200A IDM and 0.0015 ohm RDS(on), it operates in ENHANCEMENT MODE with 44ns ton and 118ns toff. This MOSFET has a max power dissipation of 375W, making it suitable for high-power electronic systems.
FDB3632 by Fairchild Semiconductor

FDB3632

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 310 W; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): 30;
STY60NK30Z by STMicroelectronics

STY60NK30Z

STMicroelectronics

STY60NK30Z by STMicroelectronics is a N-CHANNEL FET with 300V DS Breakdown Voltage, ideal for SWITCHING applications. It features 240A IDM and 0.045 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150°C. The transistor comes in a RECTANGULAR package with Matte Tin finish, offering high power dissipation of 450W.
SI7489DP-T1-E3 by Vishay Intertechnology

SI7489DP-T1-E3

Vishay Intertechnology

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; No. of Terminals: 8; Terminal Form: FLAT;
FDMS86101 by Onsemi

FDMS86101

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 100 V;
IRF9530NPBF by Infineon Technologies

IRF9530NPBF

Infineon Technologies

IRF9530NPBF by Infineon is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 56A and EAS of 250mJ, operating in ENHANCEMENT MODE. With a package style of FLANGE MOUNT and -55 to 175 °C temperature range, it offers high power dissipation at 79W.
FDB52N20TM by Fairchild Semiconductor

FDB52N20TM

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 357 W; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Position: SINGLE;
IRF540NPBF by International Rectifier

IRF540NPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING;
FDS4675 by Onsemi

FDS4675

Onsemi

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; Terminal Form: GULL WING; No. of Elements: 1;
FDD4685_F085 by Fairchild Semiconductor

FDD4685_F085

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Terminal Finish: MATTE TIN; Case Connection: DRAIN;
Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.