|=Al RCH ILD V
D -FAK
(TO .252)
FDD8778/FDU8778 N-Channel PowerTrench® MOSFET
©2006 Fairchild Semiconductor Corporation
FDD8778/FDU8778 Rev. 1.2
www.fairchildsemi.com1
FDD8778/FDU8778
N-Channel PowerTrench® MOSFET
25V, 35A, 14mΩ
Features
Max rDS(on) = 14.0mΩ at VGS = 10V, ID = 35A
Max rDS(on) = 21.0mΩ at VGS = 4.5V, ID = 33A
Low gate charge: Qg(TOT) = 12.6nC(Typ), VGS = 10V
Low gate resistance
RoHS compliant
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
Application
DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 25 V
VGS Gate to Source Voltage ±20 V
ID
Drain Current -Continuous (Package Limited) 35
A -Continuous (Die Limited) 40
-Pulsed (Note 1) 145
EAS Single Pulse Avalanche Energy (Note 2) 24 mJ
PDPower Dissipation 39 W
TJ, TSTG Operating and Storage Temperature -55 to 175 °C
RθJC Thermal Resistance, Junction to Case TO-252,TO-251 3.8 °C/W
RθJA Thermal Resistance, Junction to Ambient TO-252,TO-251 100 °C/W
RθJA Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 52 °C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDD8778 FDD8778 TO-252AA 13’’ 16mm 2500 units
FDU8778 FDU8778 TO-251AA N/A(Tube) N/A 75 units
FDU8778 FDU8778_F071 TO-251AA N/A(Tube) N/A 75 units
Short Lead I-PAK
I-PAK
(TO-251AA)
GDS
G
D
S
D
G
S
L
E
A
D
F
R
E
E
M
T
A
E
L
N
T
I
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MP
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March 2015
FDD8778/FDU8778 N-Channel PowerTrench® MOSFET
FDD8778/FDU8778 Rev. 1.2 www.fairchildsemi.com2
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 25 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to
25°C 17.2 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 20V,
VGS = 0V
1µA
TJ = 150°C250
IGSS Gate to Source Leakage Current VGS = ±20V ±10 µA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA1.2 1.5 2.5 V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to
25°C -5.3 mV/°C
rDS(on) Drain to Source On Resistance
VGS = 10V, ID = 35A 11.6 14.0
mΩ
VGS = 4.5V, ID = 33A 15.7 21.0
VGS = 10V, ID = 35A
TJ = 175°C 18.2 23.8
Dynamic Characteristics
Ciss Input Capacitance VDS = 13V, VGS = 0V,
f = 1MHz
635 845 pF
Coss Output Capacitance 160 215 pF
Crss Reverse Transfer Capacitance 108 162 pF
RgGate Resistance f = 1MHz 1.3 Ω
Switching Characteristics
td(on) Turn-On Delay Time
VDD = 13V, ID = 35A
VGS = 10V, RGS = 27Ω
6 12 ns
trRise Time 22 35 ns
td(off) Turn-Off Delay Time 43 69 ns
tfFall Time 32 51 ns
Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V
VDD = 13V
ID = 35A
Ig = 1.0mA
12.6 18 nC
Qg(5) Total Gate Charge at 5V VGS = 0V to 5V 6.7 9.4 nC
Qgs Gate to Source Gate Charge 2.1 nC
Qgd Gate to Drain “Miller”Charge 3.2 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 35A 1.03 1.25 V
VGS = 0V, IS = 15A 0.89 1.2
trr Reverse Recovery Time IF = 35A, di/dt = 100A/µs 25 38 ns
Qrr Reverse Recovery Charge IF = 35A, di/dt = 100A/µs 17 26 nC
Notes:
1: Pulse time < 300µs, Duty cycle = 2%.
2: Starting TJ = 25oC, L = 0.1mH, IAS = 22A ,VDD = 23V, VGS = 10V.
PLILSE DURATION = an PULSE DURATION = an
Figure 1. 0n Region Characteristics Figure 2. Normalized
PULSE DURATION = an
/
Figure 3. Figure 4.
PULSE DURATION = so
Figure 5. Transfer Characteristics Figure 6.
FDD8778/FDU8778 N-Channel PowerTrench® MOSFET
FDD8778/FDU8778 Rev. 1.2 www.fairchildsemi.com3
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 1. On Region Characteristics
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0
10
20
30
40
50
60
70
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 5.0V
VGS = 4.0V
VGS = 3V
VGS = 3.5V
VGS = 4.5V
VGS = 10V
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 2. Normalized
0 10203040506070
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS = 3.0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT(A)
VGS = 10V VGS = 5V
VGS = 4.5V
VGS = 4V
VGS = 3.5V
On-Resistance vs Drain
Current and Gate Voltage
Figure 3.
-80 -40 0 40 80 120 160 200
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID = 35A
VGS = 10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE (oC)
Normalized On Resistance vs Junction
Temperature
Figure 4.
3.0 4.5 6.0 7.5 9.0
0
10
20
30
40
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 175oC
TJ = 25oC
ID = 35A
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
VGS, GATE TO SOURCE VOLTAGE (V)
10
On-Resistance vs Gate to Source
Voltage
Figure 5. Transfer Characteristics
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
10
20
30
40
50
60
70
VDD = 5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = - 55oC
TJ = 25oC
TJ = 175oC
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
1E-3
0.01
0.1
1
10
100
TJ = -55oC
TJ = 25oC
TJ = 175oC
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode Forward
Voltage vs Source Current
/_
Figure 7. Figure 8.
Figure 10.
Figure 11. Figure 12. Single
FDD8778/FDU8778 N-Channel PowerTrench® MOSFET
FDD8778/FDU8778 Rev. 1.2 www.fairchildsemi.com4
Figure 7.
03691215
0
2
4
6
8
10
VDD = 16V
VDD = 10V
VGS, GATE TO SOURCE VOLTAGE(V)
Qg, GATE CHARGE(nC)
VDD = 13V
Gate Charge Characteristics Figure 8.
0.1 1 10
100
1000
40
f = 1MHz
VGS = 0V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
2000
30
Capacitance vs Drain to Source Voltage
Figure 9.
1E-3 0.01 0.1 1 10 100
1
10
50
TJ = 25oC
TJ = 125oC
TJ = 150oC
tAV, TIME IN AVALANCHE(ms)
IAS, AVALANCHE CURRENT(A)
Unclamped Inductive Switching
Capability
Figure 10.
25 50 75 100 125 150 175
0
10
20
30
40
50
RθJC = 3.8oC/W
VGS=4.5V
VGS=10V
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
Maximum Continuous Drain Current vs
Case Temperature
Figure 11.
110
0.1
1
10
100
400
LIMITED BY
PACKAGE
10us
DC
10ms
1ms
100us
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
TC = 25OC
50
Forward Bias Safe Operating Area Figure 12. Single
10-5 10-4 10-3 10-2 10-1 100101
10
100
1000
VGS = 10V
SINGLE PULSE
P(PK), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (s)
5000
T
C
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
175 TC
–
150
-----------------------
Pulse Maximum Power
Dissipation
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 13. Transient Thermal Response Curve
FDD8778/FDU8778 N-Channel PowerTrench® MOSFET
FDD8778/FDU8778 Rev. 1.2 www.fairchildsemi.com5
Figure 13. Transient Thermal Response Curve
10-5 10-4 10-3 10-2 10-1 100101
0.01
0.1
1
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJC
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
2
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
Typical Characteristics TJ = 25°C unless otherwise noted
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Rev. I75
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