FDD6670AS by onsemi Datasheet | DigiKey

FDD6670AS Datasheet by onsemi

FAIRCHILD — SEM‘CDNDUETDR’“
May 2005
©2005 Fairchild Semiconductor Corporation FDD6670AS Rev A(X)
FDD6670AS
30V N-Channel PowerTrench® SyncFET™
General Description
The FDD6670AS is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDD6670AS
includes a patented combination of a MOSFET
monolithically integrated with a schottky diode. The
performance of the FDD6670AS as the low-side switch
in a synchronous rectifier is indistinguishable from the
performance of the FDD6670A in parallel with a
Schottky diode.
Applications
• DC/DC converter
• Low side notebook
Features
• 76 A, 30 V RDS(ON) max= 8.0 mΩ @ VGS = 10 V
R
DS(ON) max= 10.4 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (29nC typical)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
.
G
S
D
TO-252
S
G
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
Drain Current – Continuous (Note 3) 76 A
ID
– Pulsed (Note 1a) 100
PD Power Dissipation (Note 1) 70
W
(Note 1a) 3.2
(Note 1b) 1.3
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case (Note 1) 1.8 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD6670AS FDD6670AS 13’’ 16mm 2500 units
FDD6670AS
ABVDSS A1 AVE - A1 a: Fumms m a ‘x‘
FDD6670AS Rev A (X)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=14A 245 mJ
IAR Drain-Source Avalanche Current 14 A
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V
∆BVDSS
∆TJ Breakdown Voltage Temperature
Coefficient ID = 10 mA, Referenced to 25°C 29 mV/°C
VDS = 24 V, VGS = 0 V 500 µA
IDSS Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V, TJ= 125°C 6.5 mA
IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V
±100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.8 3 V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient ID = 10 mA, Referenced to 25°C
–3.3 mV/°C
RDS(on) Static Drain–Source
On–Resistance VGS = 10 V, ID = 13.8 A
VGS = 4.5 V, ID = 11.7 A
VGS= 10 V, ID = 13.8A, TJ= 125°C
6.8
8.3
9.3
8.0
10.4
11.6
mΩ
ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
gFS Forward Transconductance VDS = 15 V, ID = 13.8 A 52 S
Dynamic Characteristics
Ciss Input Capacitance 1580 pF
Coss Output Capacitance 440 pF
Crss Reverse Transfer Capacitance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
170 pF
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.8 Ω
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 10 20 ns
tr Turn–On Rise Time 12 22 ns
td(off) Turn–Off Delay Time 28 45 ns
tf Turn–Off Fall Time
VDS = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
20 36 ns
td(on) Turn–On Delay Time 15 27 ns
tr Turn–On Rise Time 16 29 ns
td(off) Turn–Off Delay Time 26 42 ns
tf Turn–Off Fall Time
VDS = 15 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 Ω
13 23 ns
Qg(TOT) Total Gate Charge at VGS=10V 29 40 nC
Qg(TOT) Total Gate Charge at VGS=5V 16 22 nC
Qgs Gate–Source Charge 4.6 nC
Qgd Gate–Drain Charge
VDS = 15 V, ID = 13.8 A,
5.5 nC
Drain–Source Diode Characteristics
VSD Drain–Source Diode Forward
Voltage VGS = 0 V, IS = 3.5 A (Note 2)
VGS = 0 V, IS = 7 A (Note 2)
0.46
0.59
0.7 V
trr Diode Reverse Recovery Time 20 ns
Qrr Diode Reverse Recovery Charge
IF = 3.5 A,
diF/dt = 300 A/µs (Note 3) 15 nC
FDD6670AS
FDD6670AS Rev A (X)
D
R
P
DS(ON)
Electrical Characteristics TA = 25°C unless otherwise noted
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on a
1in2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6670AS
W M //
FDD6670AS Rev A (W)
Typical Characteristics
0
20
40
60
80
100
00.511.522.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
4.5V
4.0V
3.5V
V
GS
= 10V
6.0V
3.0V
2.5V
0.6
1
1.4
1.8
2.2
2.6
0 20406080100
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 3.0V
6.0V 10V
4.0V 4.5V
3.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 64A
V
GS
= 10V
0.005
0.01
0.015
0.02
0.025
246810
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 32A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature. Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
20
40
60
80
100
1 1.5 2 2.5 3 3.5 4 4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.001
0.01
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD6670
A
S
FDD6670AS Rev A (W)
Typical Characteristics (continued)
0
2
4
6
8
10
0 5 10 15 20 25 30
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
=13.8A
V
DS
= 10V
15V
20V
0
600
1200
1800
2400
0 5 10 15 20 25 30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01 0.1 1 10 100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC10s
1s
100ms
100
µ
s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 96
o
C/W
T
A
= 25
o
C
10ms1ms
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
θ
JA
= 96°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANC
E
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 96 °C/W
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
P
(p
k
)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDD6670
A
S
FDD6670AS Rev A (W)
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDD6670AS.
Figure 12. FDD6670AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDD6670A).
Figure 13. Non-SyncFET (FDD6670A) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.00001
0.0001
0.001
0.01
0.1
010 20 30
VDS, REVERSE VOLTAGE (V)
IDSS, REVERSE LEAKAGE CURRENT (A)
100oC
25oC
125oC
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
FDD6670
A
S
TIME : 12.5ns/div
CURRENT : 0.8A/div
TIME : 12.5ns/div
CURRENT : 0.8A/div
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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