FDD603AL MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD603AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 39 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 33 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 19 nC
Rise Time (tr): 16 nS
Drain-Source Capacitance (Cd): 345 pF
Maximum Drain-Source On-State Resistance (Rds): 0.023 Ohm
Package: TO252
FDD603AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD603AL Datasheet (PDF)
fdd603al.pdf
July 1999FDD603ALN-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThis N-Channel logic level enhancement mode power 33 A, 30 V. RDS(ON) = 0.023 @ VGS = 10 Vfield effect transistor is produced using Fairchilds RDS(ON) = 0.037 @ VGS = 4.5 V.proprietary, high cell density, DMOS technology. Thisvery high density process is tai
fdd603al.pdf
isc N-Channel MOSFET Transistor FDD603ALFEATURESDrain Current I = 33A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
fdd6030bl fdu6030bl.pdf
July 2001 FDD6030BL/FDU6030BL 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 42 A, 30 V R = 16 m @ V = 10 V DS(ON) GSspecifically to improve the overall efficiency of DC/DC R = 22 m @ V = 4.5 V DS(ON) GSconverters using either synchronous or conventional switching PWM controllers. It has been optimized for
fdd6030l.pdf
August 2003FDD6030L30V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET is produced using Fairchild 12 A, 30 V RDS(ON) = 14.5 m @ VGS = 10 VSemiconductors advanced PowerTrench process that RDS(ON) = 21 m @ VGS = 4.5 Vhas been especially tailored to minimize the on stateresistance and yet maintain low gate charge for Low gate charge
fdd6035al.pdf
July 2003FDD6035AL30V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET is produced using Fairchild 46 A, 30 V RDS(ON) = 12 m @ VGS = 10 VSemiconductors advanced PowerTrench process that RDS(ON) = 14 m @ VGS = 4.5 Vhas been especially tailored to minimize the on stateresistance and yet maintain low gate charge for Low gate charges
fdd6035al.pdf
FDD6035ALwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSOL
fdd6030l.pdf
isc N-Channel MOSFET Transistor FDD6030LFEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 13.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
fdd6030bl.pdf
isc N-Channel MOSFET Transistor FDD6030BLFEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
fdd6035al.pdf
isc N-Channel MOSFET Transistor FDD6035ALFEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
Datasheet: UTD452 , UTM2054 , UTM2513 , UTN3055 , UTP45N02 , UTT200N02 , UP2003 , UT2309 , MDF11N65B , UT3310 , UT3401 , UT3401Z , UT3403 , UT3409 , UT3443 , UT3P01Z , UT4411 .
