Details, datasheet, quote on part number: E37120M1FN1S
| Part | E37120M1FN1S |
| Category | Discrete => Diodes => Diode Arrays |
| Title | SILICON, BRIDGE RECTIFIER DIODE |
| Description | |
| Company | Formosa Microsemi Co. |
| Datasheet | Download E37120M1FN1S Datasheet |
| Specifications | |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Diode Applications | Rectifier |
| Number of Diodes | 4 |
| Related products with the same datasheet |
| E37120M1EC1S |
| E37120M1EN1S |
| E37120M1EN1S |
| E37120M1FB1S |
| E37120M1FBC1S |
| E37120M1FC1S |
| E37120M1TB1S |
| E37120M1TBC1S |
| E37120M1TC1S |
| E37120M1TN1S |
| Some Part number from the same manufacture Formosa Microsemi Co. |
| E37120M1TB1S Specifications: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; Number of Diodes: 4 |
| E37120N1EBC1S Specifications: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier |
| E37120Q1EBC1S |
| E37120V1EBC1S Specifications: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; Number of Diodes: 6 |
| E37120W1EBC1S Specifications: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier |
| E37120X1EBC1S |
| E37120Y1EBC1S |
| E37120Z1EBC1S Specifications: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; Number of Diodes: 6 |
| E37160B1EBC1S |
|
EDI88128LPS45LB : 128K X 8 STANDARD SRAM, 15 ns, CDIP32 Specifications: Memory Category: SRAM Chip ; Density: 1049 kbits ; Number of Words: 128 k ; Bits per Word: 8 bits ; Package Type: DIP, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 ; Pins: 32 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 15 ns ; Operating Temperature: -55 to 125 C (-67 to 257 G4330Z1FBC1S : 3 PHASE, SILICON, BRIDGE RECTIFIER DIODE Specifications: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; Number of Diodes: 6 JANTX1N5524DUR-1 : 5.1 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH Specifications: Diode Type: VOLTAGE REGULATOR DIODE M1A3P250-2QNG132Y : FPGA, 250000 GATES, PBGA144 Specifications: System Gates: 250000 ; Package Type: Other, 1 MM PITCH, FBGA-144 ; Logic Family: CMOS ; Pins: 144 ; Operating Temperature: 0 to 70 C (32 to 158 F) ; Supply Voltage: 1.5V M1A3P600-1PQG208PQ208 : FPGA, 600000 GATES, PBGA144 Specifications: System Gates: 600000 ; Package Type: Other, 1 MM PITCH, FBGA-144 ; Logic Family: CMOS ; Pins: 144 ; Operating Temperature: 0 to 70 C (32 to 158 F) ; Supply Voltage: 1.5V MART100KP280A : 100000 W, UNIDIRECTIONAL, SILICON, TVS DIODE Specifications: Configuration: Single ; Direction: Unidirectional ; Package: PLASTIC PACKAGE-2 ; Pin Count: 2 ; Number of Diodes: 1 ; VBR: 111 to 136 volts MQLC30 : 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-202AA Specifications: Configuration: Single ; Direction: Unidirectional ; Package: HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN ; Pin Count: 2 ; Number of Diodes: 1 ; VBR: 33.3 to 40.7 volts MXSMLJ20CAE3 : 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB Specifications: Configuration: Single ; Direction: Unidirectional ; Package: PLASTIC PACKAGE-2 ; Pin Count: 2 ; Number of Diodes: 1 ; VBR: 22.2 to 27.1 volts W7NCF01GH20IS4FG : 64M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC Specifications: Memory Category: Flash, PROM ; Density: 1025507 kbits ; Number of Words: 64000 k ; Bits per Word: 16 bits ; Package Type: CARD ; Supply Voltage: 3.3V ; Access Time: 150 ns ; Operating Temperature: -40 to 85 C (-40 to 185 F) 20KP60ACOX.250 : 20000 W, UNIDIRECTIONAL, SILICON, TVS DIODE Specifications: Configuration: Single ; Direction: Unidirectional ; Pin Count: 2 ; Number of Diodes: 1 |