BC546 : Description = General Purpose Transistor ;; Package = TO-92

BC858 : Description = General Purpose Transistor ;; Package = SOT-23

E35A23VDS : Alternator Diode Description = Alternator Diode (Negative) ;; Package = PD

KDV240E : Description = Vco For UHF Band Radio ;; Package = Esc

KDZ6.8V : Description = Zener Diode ;; Package = Usc

KIA79L15BP : Description = 0.15A 3-Terminal Voltage Regulator ;; Package = TO-92L

KMP47C486M : 4-bit Microcontrollers

KN3906 : Description = General Purpose Transistor ;; Package = TO-92

KTB1424 : Description = Darlington Transistor ;; Package = TO-220IS

KTD2058 : Description = General Purpose Transistor ;; Package = TO-220IS

1.5KE : Pot (W) = 1500 ;; VBR(V) = 6V8 440. 1500W Unidirectional and Bidirectional Transient Voltage Suppressor Diodes Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 300 �C. 3. Max. soldering time, 3.5 sec. 4. Do not bend lead at a point closer than 3 mm. to the body. Glass passivated junction Low Capacitance AC signal protection Response.

APT10050LVR : 1000V, 21A Power MOS V. Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V� also achieves faster switching speeds through optimized gate layout. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source.

MF35 : 40a 1200v Stud Fast Recovery Diode. APPLICATIONS s Inverse, Parallel Or Series Connected Diode s Power Supplies s High Frequency Applications s Glass Passivation s High Voltage Capability s Fast Recovery Characteristics Type Number Repetitive Peak Reverse Voltage VRRM V Conditions Lower voltage grades available. For stud anode add suffix 'R' to type number. e.g. MF35-1200R. Outline type.

QST7 : . !Application Low frequency amplifier Driver !External dimensions (Units : mm) Parameter Collector-base voltage Symbol VCBO VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICP PC Power dissipation Junction temperature Tj Range of storage temperature Tstg 1 Single pulse, PW=1ms 2 Each Terminal Mounted on a Recommended Parameter.

PMEG2010EH : Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection, encapsulated in small Surface-Mounted Device (SMD) plastic packages..

FDMA530PZ : -20V Dual P-Channel PowerTrench MOSFET This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It a MOSFET with low on�state resistance. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications..

08B01XX136-F : DATACOM TRANSFORMER FOR. s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER.

BGR30QA : RESISTOR, WIRE WOUND, 30 W, 5 %, 250 ppm, 2.2 ohm - 3300 ohm, CHASSIS MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: Bolt-on Chassis, Radial Leads, RADIAL LEADED ; Operating DC Voltage: 750 volts ; Operating Temperature: -40 to 25 C (-40 to 77 F).

BRM-100R-10.0-L : RESISTOR, 200 W, 10 %, 100 ohm, CHASSIS MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Bolt-on Chassis ; Resistance Range: 100 ohms ; Tolerance: 10 +/- % ; Power Rating: 200 watts (0.2680 HP) ; Operating DC Voltage: 1000 volts ; Operating Temperature: -50 to 150 C (-58 to 302 F).

C052G110F2G5CM : CAPACITOR, CERAMIC, MULTILAYER, 200 V, C0G, 0.000011 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 1.10E-5 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 200 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Through Hole ; Operating.

DA6X109W : SILICON, VHF BAND, MIXER DIODE. s: Arrangement: Common Catode ; Diode Type: MIXER DIODE ; Diode Applications: Mixer ; RoHS Compliant: RoHS ; Package: HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, 6 PIN ; Pin Count: 6 ; Number of Diodes: 4.

ERJ12RQ : RESISTOR, METAL GLAZE/THICK FILM, 0.5 W, 1; 2; 5 %, 100; 200 ppm, 0.22 ohm - 9.1 ohm, SURFACE MOUNT, 1812. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 1812, CHIP ; Operating Temperature: -55 to 125 C (-67 to 257 F).

KX503R2 : RESISTOR, TEMPERATURE DEPENDENT, NTC, 50000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED ; Resistance Range: 50000 ohms ; Power Rating: 0.0300 watts (4.02E-5 HP) ; Operating Temperature: -80 to 135 C (-112 to 275 F).

PTV142B : RESISTOR, POTENTIOMETER, CARBON FILM, 1 TURN(S), 0.05 W, 1000 ohm - 1000000 ohm. s: Potentiometer Type: Standard Potentiometer ; Mounting / Packaging: ThroughHole, ROHS COMPLIANT ; Operating Temperature: -10 to 50 C (14 to 122 F).

RL895270K : 1 ELEMENT, 27 uH, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: Radial, PRINTED WIRING PIN ; Application: General Purpose, RF Choke ; Inductance Range: 27 microH.

SSRD8620CTT4G : RECTIFIER DIODE. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier ; RoHS Compliant: RoHS.

YC158 : RESISTOR, NETWORK, FILM, BUSSED, 0.0625 W, SURFACE MOUNT, 0612. s: Configuration: Chip Array ; Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP, ROHS COMPLIANT ; Operating DC Voltage: 25 volts ; Operating Temperature: -55 to 125 C (-67 to 257 F).

2322245 : RESISTOR, METAL GLAZE/THICK FILM, 0.5 W, 10; 20 %, 600 ppm, 220 ohm - 10000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Operating Temperature: -55 to 70 C (-67 to 158 F).