Hermetically sealed active components Internal back-facet monitor Qualification program: Telcordia Technologies * TA-983

The low-profile D571-Type Laser Module is ideally suited for short- and long-haul SONET and other high-speed digital applications.

Easily board mounted Requires no lead bending No additional heat sinks required Pin compatible with industry-standard 14-pin laser module Highly efficient DFB-MQW laser structure allows for lower threshold and drive currents, and reduced power consumption

Eight-pin package suitable for SONET/SDH applications Narrow linewidth, distributed-feedback, multiquantum-well (DFB-MQW), 1550 nm laser with single-mode fiber pigtail Available in narrow and wide temperature ranges No TEC required High output power: Typical 2.0 mW peak power coupled into singlemode fiber 1.0 mW devices are also available

The D571-Type Uncooled Laser Module consists of a laser diode coupled to a single-mode fiber pigtail. The device is available in a standard, 8-pin configuration (see Figure 1 and/or Table 1) and is ideal for long-reach (SONET) and other high-speed digital applications. The laser diode is a narrow linewidth (<1 nm) DFBMQW single-mode laser and an InGaAs PIN photodiode back-facet monitor in an epoxy-free, hermetically sealed package.

qualified for the central office and uncontrolled environments, and can be used for applications requiring high performance and low cost. Table 1. Pin Descriptions Pin Number Connection NC/Reserved Case ground NC/Reserved Photodiode cathode Photodiode anode Laser diode cathode Laser diode anode NC/Reserved

The device characteristics listed in this document are met 2.0 mW output power. Higher- or lower-power operation is possible. Under conditions of a fixed photodiode current, the change in optical output is typically �0.5 dB over an operating temperature range to +85 �C. This device incorporates the new Laser 2000 manufacturing process developed by the Optoelectronic unit of Lucent Technologies Microelectronics Group. Laser is a low-cost platform that targets high-volume manufacturing and tighter product distributions on all optical subassemblies. The platform incorporates an advanced optical design that is produced on a highly automated production line. The Laser 2000 platform is

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operations sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Parameter Maximum Peak Laser Drive Current or Maximum Fiber Power* Peak Reverse Laser Voltage: Laser Monitor Forward Current Operating Case Temperature Range Storage Case Temperature Range Lead Soldering Temperature/Time Relative Humidity (noncondensing)

CAUTION: This device is susceptible to damage as a result of electrostatic discharge (ESD). Take proper precautions during both handling and testing. Follow guidelines such as JEDEC Publication No. 108-A (Dec. 1988). Although protection circuitry is designed into the device, take proper precautions to avoid exposure to ESD.

Table 2. Electro-Optical Characteristics (over operating temperature range unless otherwise noted) Parameter Operating Temperature Range Optical Output Power* Threshold Current Symbol T PF ITH Test Conditions CW, nominal T = full range 70 �C CW, = 2.0 mW, 25 �C CW, IMON = constant, T = full range F CW, = 2.0 mW, = 2.0 mW, = 2.0 mW, = 2.0 mW, 622 Mbits/s CW, 2.0 mW IMON = constant, = (0.9) ITH 10%--90% pulse 5 V VR� 5 V Min Typ Max Unit mW mA �W/mA �A nA nm/�C

Slope Efficiency Center Wavelength Center Wavelength 1510 nm codes Spectral Width (�20 dB) Side-mode Suppression Ratio Tracking Error Spontaneous Emission Rise/Fall Times Forward Voltage Input Impedance Monitor Current Monitor Dark Current Wavelength Temperature Coefficient

* 1mW power option also available. See Table 4 for more information. BOL value; EOL = 80 mA. The slope efficiency is used to calculate the modulation current for a desired output power. This modulation current plus the threshold current comprise the total operating current for the device. VR = reverse voltage.