2SD1026 :

D3FS6-5063 : Schottky (Diodes & Rectifiers) 3.0 Amp 60 Volt Specifications: Manufacturer: Shindengen ; Product Category: Schottky (Diodes & Rectifiers) ; RoHS:  Details ; Product: Schottky Diodes ; Peak Reverse Voltage: 60 V ; Forward Continuous Current: 1.65 A ; Max Surge Current: 80 A ; Configuration: Single ; Forward Voltage Drop: 0.58 V at 3 A ; Max

D25XB60-7000 : Bridge Rectifiers VRM=600 IFSM=350 Specifications: Manufacturer: Shindengen ; Product Category: Bridge Rectifiers ; RoHS:  Details ; Product: Single Phase Bridge ; Peak Reverse Voltage: 600 V ; Max Surge Current: 350 A ; Forward Voltage Drop: 1.05 V ; Maximum Reverse Leakage Current: 10 uA ; Maximum Operating Temperature: + 150

K1V11-4060 : Sidacs ITSM=20 VBO= 104-118 Specifications: Manufacturer: Shindengen ; Product Category: Sidacs ; RoHS:  Details ; Breakover Voltage VBO: 118 V ; Breakover Current IBO Max: 0.5 mA ; Rated Repetitive Off-State Voltage VDRM: 90 V ; Off-State Leakage Current @ VDRM IDRM: 10 uA ; Forward Voltage Drop: 1.5 V ; Mounting Style:

D1FL20U-4103 : 1.1 A, 200 V, SILICON, RECTIFIER DIODE Specifications: Package: 1F, 2 PIN ; Number of Diodes: 1 ; VRRM: 200 volts ; IF: 1100 mA ; trr: 0.0350 ns

K1V(A)12-04P15-4060 : 113 V, SIDAC Specifications: Pin Count: 2

K1V14-4061 : 150 V, SIDAC Specifications: Package Type: CASE AX10, 2 PIN ; Pin Count: 2

S2L604003P20 : 1.2 A, SILICON, RECTIFIER DIODE Specifications: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, SUPER FAST RECOVERY ; IF: 1200 mA ; trr: 0.0500 ns

2SK2191-4072 : 12 A, 500 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 500 volts ; rDS(on): 0.7000 ohms ; Package Type: TO-220, STO-220, 3 PIN ; Number of units in IC: 1

2SK2192-4012 : 12 A, 500 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 500 volts ; rDS(on): 0.7000 ohms ; Number of units in IC: 1

1N5233B : 6.0V, 0.5W Zener Diode. Power Dissipation Derate above 75�C Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature (1/16" from case for 10 seconds) Surge Power** *These ratings are limiting values above which the serviceability of the diode may be impaired. **Non-recurrent square wave PW= 8.3 ms, TA= 50 degrees C. NOTES: 1) These ratings are based.

2SB1122 : PNP Epitaxial Planar Silicon Transistor, Low-frequency Power Amp Application.

FSBCW30 : Amplifier. Small Signal Transistor. This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See BC857A for characteristics. VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous *These ratings are limiting values above which the serviceability of any semiconductor.

GR1A : Glass Passivated.

IRF6217 : -150V Single P-channel HexFET Power MOSFET in a SO-8 Package. Applications Reset Switch for Active Clamp Reset to DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current = 70�C IDM PD @TA = 25�C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous.

ISL9N310AS3 : N-channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs. N-Channel Logic Level PWM Optimized UltraFET� Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Fast switching.

KSD425AC8 : Input Signal Voltage: 4-32V Solid State Relay.

LH1546AAB : . Current Limit Protection l/O Isolation, 5300 VRMS Typical RON 20 Load Voltage 350 V Load Current 120 mA High Surge Capability Linear, AC/DC Operation Clean Bounce Free Switching Low Power Consumption High Reliability Monolithic Receptor SMD lead available on tape and reel Equivalent to CP Clare LCA110 Flammability; UL94, V� AGENCY APPROVALS UL � File.

M68762SL : Power. RF Power Module For 350-400MHz, 30W FM Mobile Radio. PIN: 1 Pin : RF INPUT 1st. DC SUPPLY 2nd. DC SUPPLY 3rd. DC SUPPLY : RF OUTPUT 6 GND : FIN SYMBOL PARAMETER Vcc SUPPLY VOLTAGE Icc TOTAL CURRENT Pin INPUT POWER Po OUTPUT POWER Tc(OP) OPERATION CASE TEMPERATURE Tstg STORAGE TEMPERATURE Note:Above parameters are guaranteed independently. CONDITIONS ZG=ZL=50 ohms ZG=ZL=50 ohms Vcc1<12.5V, ZG=ZL=50.

QM20TD-HB : Modules. Transistor Module Medium Power Switching Use Insulated Type. IC Collector current. 20A VCEX Collector-emitter voltage. 600V hFE DC current gain. 250 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders Symbol VCEX (SUS) VCEX VCBO VEBO IC �IC PC IB �ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter.

SQ1893 : Chip Type 2c1893 Geometry 4500 Polarity NPN. Chip type 2C1893 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for medium power amplifier and switching applications. : Medium power ratings Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base 12 k� min. 6.5 k� nom. 2.3 mils x 7.0 mils 5.0 mils.

C16844-000 : RESISTOR, TEMPERATURE DEPENDENT, PTC RESETTABLE FUSE, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, ROHS COMPLIANT ; Power Rating: 4.6 watts (0.0062 HP) ; Operating AC Voltage: 16 volts ; Standards and Certifications: RoHS.

WT0J107M05011CS : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 6.3 V, 100 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 100 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 6.3 volts ; Leakage Current: 18.9 microamps ; Mounting Style: Through Hole ; Operating Temperature:.