S3L20U : Super Fast Recoveryrectifiers / Single (Axial)

D20LC20U-4012 : 20 A, SILICON, RECTIFIER DIODE Specifications: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, SUPER FAST RECOVERY ; IF: 20000 mA ; Pin Count: 3 ; Number of Diodes: 2

D2SBA20-4004 : 1.5 A, SILICON, BRIDGE RECTIFIER DIODE Specifications: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 60000 mA ; VBR: 200 volts ; Package: SIP-4 ; Pin Count: 4 ; Number of Diodes: 4

D3S4M4003P20 : 2 A, SILICON, RECTIFIER DIODE Specifications: Rectifier Configuration / Technology: Schottky ; Number of Diodes: 1 ; IF: 2000 mA

D3SBA60-4100 : 2.3 A, SILICON, BRIDGE RECTIFIER DIODE Specifications: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 80000 mA ; VBR: 600 volts ; Pin Count: 4 ; Number of Diodes: 4

D4SC6M-4015 : 2 A, 60 V, SILICON, RECTIFIER DIODE Specifications: Arrangement: Common Catode ; Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 2000 mA ; Package: TO-220, ITO-220, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2

G1V(A)14C : 110 V, SIDAC Specifications: Package Type: CASE AX06, 2 PIN ; Pin Count: 2

K1V(A)11-01P12.5-4061 : 113 V, SIDAC Specifications: Pin Count: 2

S3WB60-4000 : 2.3 A, SILICON, BRIDGE RECTIFIER DIODE Specifications: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 120000 mA ; VBR: 600 volts ; Pin Count: 4 ; Number of Diodes: 4

SF10LC20U-4100 : 10 A, SILICON, RECTIFIER DIODE Specifications: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, SUPER FAST RECOVERY ; IF: 10000 mA ; Package: FTO-220, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2

VRYA15-4102 : SILICON, STABISTOR DIODE Specifications: Diode Type: STABISTOR DIODE ; VF: 7.13 to 8.37 volts ; Package: 1Y, 4 PIN ; Pin Count: 4 ; Number of Diodes: 16

2N4909 : Screening Options Available = ;; Polarity = PNP ;; Package = TO3 (TO204AA) ;; Vceo = 80V ;; IC(cont) = 10A ;; HFE(min) = 20 ;; HFE(max) = 80 ;; @ Vce/ic = 4V / 4A ;; FT = 4MHz ;; PD = 150W.

AT737LT : Phase Control Thyristor. Via N. Lorenzi I 16152 GENOVA - ITALY Tel. int. Fax Int. Tx 270318 ANSUSE I - Repetitive voltage up to Mean on-state current Surge current 50.4 kA Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Repetitive peak reverse current Repetitive peak off-state current V=VRRM V=VDRM Mean on-state current.

FS70VSJ-2 : for General Switching. Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory.

KTA2014V : = General Purpose Transistor ;; Package = VSM.

LCE6.5thruLCE28ASeries : Low Capacitance Transzorb(tm) Transient Voltage Suppressor. Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Glass passivated junction 1500W peak pulse power capabililty with a 10/1000�s waveform, repetition rate (duty cycle): 0.05% Excellent clamping capability Low incremental surge resistance Very fast response time Ideal for data line applications High temperature soldering guaranteed:.

MMS9018 : Package Type : SOT-23 Plastic-encapsulate Bipolar Transistors, PC : 310mW, Vceo : 18V, ic : 50mA.

MSG108 : Schottky Rectifier, Package : DO-41.

S100 : . SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER 1.0 Ampere CURRENT VOLTAGE to 100 Volts Plastic package has Underwriters Laboratory Flammability Classification 94V-O For surface mounted applications Low profile package Built-in strain relief Metal to silicon rectifier. majority carrier conduction Low power loss,high efficiency High surge capacity High current.

G8HN : Micro ISO Automotive Relay SPST/SPDT contacts Fully automated assembly. Lower power consumption than G8H. Environment-friendly and light weight. Made in USA.

05002-3R9ACMP : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.0000039 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 3.90E-6 microF ; Capacitance Tolerance: 6 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface.

CL03C3R3BA3GNNC : CAPACITOR, CERAMIC, MULTILAYER, 25 V, C0G, 0.0000033 uF, SURFACE MOUNT, 0201. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 3.30E-6 microF ; Capacitance Tolerance: 3 (+/- %) ; WVDC: 25 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

DS3316P-102B : 1 ELEMENT, 1 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Molded / Shielded: Shielded ; Application: General Purpose, Power Choke ; Inductance Range: 1 microH ; Inductance Tolerance: 20 (+/- %) ; DCR: 0.0210 ohms ; SRF: 140 MHz ; Testing.

EMLF100ADA221MHA0G : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 10 V, 220 uF, SURFACE MOUNT. s: : Polarized ; Capacitance Range: 220 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 10 volts ; Leakage Current: 66 microamps ; Mounting Style: Surface Mount Technology ; Operating Temperature: -25 to 105 C (-13 to 221 F).

PA1137NL : 13.5 W, SMPS TRANSFORMER. s: Category: Power, Signal ; Other Transformer Types / Applications: SMPS TRANSFORMER ; Mounting: Chip Transformer ; Operating Frequency: 200000 Hz ; Input Voltage: 33 to 57 volts ; Output Voltage: 5 volts ; Operating Temperature: -40 to 130 C (-40 to 266 F).

RD1812 : CAPACITOR, CERAMIC, MULTILAYER, 250 V, SURFACE MOUNT, 1812; 1612M. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Surface Mount Technology ; Operating Temperature: -55 to 125 C (-67 to 257 F).

TIP127G-T60-K : 5 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-126. s: Polarity: PNP ; Package Type: HALOGEN FREE PACKAGE-3.

36MB10APBF : 35 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE. s: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 500000 mA ; RoHS Compliant: RoHS ; Pin Count: 4 ; Number of Diodes: 4.