CSL13003 Datasheet PDF - CDIL
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CSL13003

CDIL

NPN SILICON PLANAR EPITAXIAL

www.DataSheet4U.com Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN SILICON PLANAR...


CSL13003

CDIL


Octopart Stock #: O-546870

Findchips Stock #: 546870-F

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www.DataSheet4U.com Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR CSL13003 TO-92 Plastic Package E CB Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VCBO Collector
More View Base Voltage VCEO Collector Emitter (sus) Voltage VEBO Emitter Base Voltage IC Collector Current Continuous **ICM Peak Power Dissipation @ Ta=25ºC PC Derate Above 25ºC Power Dissipation @ TLead=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Tj, Tstg Range THERMAL RESISTANCE Junction to Case, Tc=25ºC Junction to Lead Junction to Ambient in free air Rth (j-c) Rth (j-L) Rth (j-a) VALUE 600 400 9.0 1.5 3.0 1.1 8.8 2.0 16 - 65 to +150 UNIT V V V A A W mW/ ºC W mW/ ºC ºC 48.0 62.5 ºC/W ºC/W ºC/W MIN 600 400 TYP MAX UNIT V V mA mA mA ww w.D ata Sh eet 4U .co m 113.6 ` ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION VCBO IC=1mA, IE=0 Collector Base Voltage *VCEO (sus) IC=10mA, IB=0 Collector Emitter (sus) Voltage ICBO VCB=600V, IE=0 Collector Cut Off Current VCB=600V, IE=0, Tc=100ºC IEBO VEB=9V, IC=0 Emitter Cut Off Current *hFE IC=0.3A, VCE=2V (Note1) DC Current Gain IC=0.5A, VCE=2V IC=1A, VCE=2V *VCE (sat) IC=0.5A, IB=0.1A Collector Emitter Saturation Voltage IC=1A, IB=0.25A IC=1.5A, IB=0.5A IC=1A, IB=0.25A,Tc=100ºC *VBE (sat) IC=0.5A, IB=0.1A Base Emitter Saturation Voltage IC=1A, IB=0.25A IC=1A, IB=0.25A,Tc=100ºC * Pulse Test: PW=300µ s, Duty Cycle=2% ** Pulse Test: Pulse Width=5ms, Duty Cycle=10% 10 8.0 4.0 1.0 5.0 1.0 30 40 25 0.5 1.0 3.0 1.0 1.0 1.2 1.1 V V V V V V V CSL13003Rev261103E Continental Device India Limited Data Sheet Page 1 of 5 www.DataSheet4U.com NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR CSL13003 TO-92 Plastic Package E CB DYNAMIC CHARACTERISTICS DESCRIPTION Current Gain Bandwidth Product Output Capacitance SWITCHING TIME DESCRIPTION Turn On Time Fall Time Storage Time Note (1) hFE Classifications:Note (1):- Product is pre selected in DC current gain (Groups A to F). CDIL reserves the right to ship any of the groups according to production availability. MARKING SYMBOL fT Cob TEST CONDITION IC=100mA, VCE=10V, f=1MHz VCB=10V, f=0.1MHz MIN 4.0 TYP MAX UNIT MHz 21 pF SYMBOL ton tf tstg A TEST CONDITION VCC=125V IB1=0.2A, IB2=0.2A IC=1A B 15-19 MIN TYP MAX 1.1 0.7 4.0 UNIT µs µs µs F 24-30 C 18-22 E 21-25 10-16 CSL 13003 A CSL 13003 B CSL 13003 C CSL 13003 E CSL 13003 F CSL13003Rev261103E ww w.D ata Sh eet 4U .co m Continental Device India Limited Data Sheet Page 2 of 5 www.DataSheet4U.com CSL13003 TO-92 Plastic Package TO-92 Plastic Package B Dimension With 'L' Uncontrolled DIM A B C D E F G






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