CSD1426F datasheet(1/3 Pages) CDIL | NPN HIGH VOLTAGE SILICON POWER TRANSISTORS

Part No.	CSD1426F

Description	NPN HIGH VOLTAGE SILICON POWER TRANSISTORS

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Manufacturer	CDIL [Continental Device India Limited]

Direct Link	http://www.cdilsemi.com

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Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN HIGH VOLTAGE SILICON POWER TRANSISTORS

CSD1426F

TO-3P Fully Isolated

Plastic Package

Colour TV Horizontal Output Applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector Base Voltage

VCBO

1500

V

Collector Emitter Voltage

VCEO

600

V

Emitter Base Voltage

VEBO

5.0

V

Collector Current -Continuous

IC

3.5

A

Emitter Current

IE

-3.5

A

Collector Power Dissipation @ Tc=25ºC

PC

34

W

Junction Temperature

Tj

150

ºC

Storage Temperature Range

Tstg

-55 to +150

ºC

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Cut off Current

ICBO

VCB=500V, IE=0

10

µA

Emitter Base Breakdown Voltage

VEBO

IE=200mA, IC=0

5.0

V

DC Current Gain

hFE

IC=0.5A, VCE=5V

8

Collector Emitter Saturation Voltage

VCE(Sat)

IC=3A, IB=0.8A

8V

Base Emitter Saturation Voltage

VBE(sat)

IC=3A, IB=0.8A

1.5

V

Forward Voltage ( Damper Diode)

-VF

IF=3.5A

2.0

V

DYNAMIC CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNIT

Transition Frequency

fT

VCE=10V, IC= 100mA

3

MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0, f=1MHz

95

pF

SWITCHING CHARACTERISTICS

Fall Time

tf

ICP=3A, IB1(end)= 0.8A

1.0

µs

IS/ISO 9002

Lic# QSC/L- 000019.2

B

C

E

Continental Device India Limited

Data Sheet

Page 1 of 3

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