C30807EH, C30808EH, C30822EH, C30809EH and C30810EH Types by Excelitas Technologies Datasheet | DigiKey

C30807EH, C30808EH, C30822EH, C30809EH and C30810EH Types Datasheet by Excelitas Technologies

www.excelitas.com Page 1 of 9 C30807, 808, 822, 809, and 810EH –Rev.2018.07.09
DATASHEET
Photon Detection
C30807EH, C30808EH, C30822EH, C30809EH and C30810EH Types
N-type Silicon PIN Photodetectors
Overview
The family of N-type silicon PIN photodiodes is designed for use in a
wide variety of broad band low light level applications covering the
spectral range from below 400 to over 1100 nanometers.
The wide range of photosensitive areas making up this series
provides a broad choice in photosensitive areas and in time
response characteristics. All the photodiodes are hermetically
sealed in TO packages, and is anti-reflection coated to enhance
responsivity at 900nm.
These characteristics make the devices highly useful in HeNe and
GaAs laser detection systems and in optical demodulation, data
transmission, ranging, and high-speed switching applications.
Recognizing that different applications have different performance
requirements, Excelitas offers a wide range of customizations of
these photodiodes to meet your design challenges. Responsivity
and noise screening, custom device testing and packaging are
among many of the application specific solutions available.
Key Features
High responsivity
Fast response time
Low operating voltage
Low capacitance
Hermetically sealed packages
RoHS Compliant
Applications
Laser detection systems
Photometry
Data transmission
Instrumentation
High speed switching
Responsivity at 900 nm 0.5 0.6 0.5 0.6 0.5 0.6 Quantum EfflClel’le at 900 nm at 1060 nm 70 33 70 83 70 83 Total Dark Current at Vop = 10V 25 10 50 Noise Current Noise Equivalent Power at 900 nm at 1060 nm 0.1 0.7 0.17 1.2 0.22 1.5
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C30807EH, C30808EH, C30822EH, C30809EH and C30810EH Types
N-type Silicon PIN Photodetectors
Table 1 ̶ Mechanical and Optical Characteristics
Parameter
Symbol
C30807EH
C30808EH
C30822EH
C30809EH
C30810EH
Unit
Shape
Circular
Circular
Circular
Circular
Circular
Package
TO-18
TO-5
TO-8
TO-8
TO-36
Photosensitive Surface:
Useful area
Useful diameter
A
d
0.8
1
5
2.5
20
5
50
8
100
11
mm2
mm
Field of View:
Nominal field of view α (see Figure 5)
Nominal field of view α’ (see Figure 5)
FoV
60
88
85
129
94
142
56
147
77
138
Degrees
Table 2 ̶ Electro-Optical Characteristics
Case Temperature Ta = 22 °C; at the DC reverse operating voltage V=45V, Vop
Parameter
Symbol
C30807EH
C30808EH
C30822EH
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Breakdown Voltage
Vbr
100
100
100
V
Operating Voltage
Vop
45
45
45
V
Responsivity
at 900 nm
at 1060 nm
R
0.5
0.1
0.6
0.15
0.5
0.1
0.6
0.20
0.5
0.1
0.6
0.20
A/W
Quantum Efficiency
at 900 nm
at 1060 nm
Q.E.
70
12
83
17
70
12
83
23
70
12
83
23
%
Total Dark Current
at Vop = 10V
at Vop = 45V
Id
2
10
1
50
5
30
25
150
10
50
50
250
nA
Noise Current
f=10kHz, Δf=1.0Hz
in
0.06
0.42
0.1
0.7
0.13
0.9
pA/√Hz
Capacitance
Cd
2.5
3
5
10
12
20
pF
Noise Equivalent Power
at 900 nm
at 1060 nm
f – 100kHz, ∆f – 1.0Hz
NEP
0.1
0.4
0.7
2.8
0.17
0.50
1.2
3.5
0.22
0.65
1.5
4.5
pW/√Hz
Rise/Fall Time, RL = 50Ω,
900nm:
10% to 90% points
90% to 10% points
tr
tf
3
6
5
10
12
13
20
20
12
13
20
20
ns
Respo nsivity at 900 nm 0.5 0.6 05 0‘6 Quantum Efficiency at 900 nm at 1060 nm 70 33 70 83 Total Dark Current at Vop = 10V 25 130 83 400 Noise Current Noise Equivalent Power at 900 nm at 1060 nm 0.2 1.6 0.45 3‘6
www.excelitas.com Page 3 of 9 C30807, 808, 822, 809, and 810EH –Rev.2018.07.09
C30807EH, C30808EH, C30822EH, C30809EH and C30810EH Types
N-type Silicon PIN Photodetectors
Table 2 (continued) ̶ Electro-Optical Characteristics
Case Temperature Ta = 22 °C; at the DC reverse operating voltage V=45V, Vop
Table 3 ̶ Absolute – Maximum Ratings, Limiting Values
Parameter
Symbol
Minimum
Maximum
Unit
Remarks/Conditions
Reverse Bias Voltage
100
V
Photocurrent Density :
average value
peak value
Jp
5
20
mA/mm2
Continuous operation, at Ta = 22 °C
Forward Current:
average value
peak value
IF
10
20
mA
Continuous operation, at Ta = 22 °C
(For 1 second duration, non-repetitive)
Storage Temperature
Tstg
-60
100
°C
Operating Temperature
To
-40
80
°C
Soldering
200
°C
5 seconds, leads only
Parameter
Symbol
C30809EH
C30810EH
Unit
Min
Typ
Max
Min
Typ
Max
Breakdown Voltage
Vbr
100
100
V
Operating Voltage
Vop
45
45
V
Responsivity
at 900 nm
at 1060 nm
R
0.5
0.1
0.6
0.20
0.5
0.1
0.6
0.20
A/W
Quantum Efficiency
at 900 nm
at 1060 nm
Q.E.
70
12
83
23
70
12
83
23
%
Total Dark Current
at Vop = 10V
at Vop = 45V
Id
25
70
130
350
83
300
400
1500
nA
Noise Current
f=10kHz, Δf=1.0Hz
in
0.15
1.1
0.3
2.1
pA/√Hz
Capacitance
Cd
25
45
45
90
pF
Noise Equivalent Power
at 900 nm
at 1060 nm
f – 100kHz, ∆f – 1.0Hz
NEP
0.2
0.75
1.6
5.5
0.45
1.5
3.6
11
pW/√Hz
Rise/Fall Time, RL = 50Ω:
10% to 90% points
90% to 10% points
tr
tf
12
13
20
20
15
20
25
30
ns
Figure 1 — Typical Spectral Responsivity Characteristics
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C30807EH, C30808EH, C30822EH, C30809EH and C30810EH Types
N-type Silicon PIN Photodetectors
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
400 500 600 700 800 900 1000 1100 1200
Responsivity [A/W]
Wavelength [nm]
C30807EH
C30808-809-810-822-EH
0.01
0.1
1
10
10 100 1000 10000
Noise Current, in[pA/√Hz]
Frequency [Hz]
C30810
C30809
C30822
C30808
C30807
Figure 2 ̶ Typical Noise Current as a function of Frequency, Ta=22°C, Vop= 45V
Figure 1 ̶ Typical Spectral Responsivity Characteristics
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C30807EH, C30808EH, C30822EH, C30809EH and C30810EH Types
N-type Silicon PIN Photodetectors
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
10 100
Dark Current, Id[nA]
Ambient Temperature [°C]
C30810
C30809
C30822
C30808
C30807
Figure 3 ̶ Typical Dark Current as a function of Ambient Temperature, Vop = 45V
Sat/2 PHOTOSENSITIVE \a 2 SURFACE 7 OUTER WIN DOW ‘ SURFACE ‘ VS-383 _ 212 1.04 533 (o ) (0.041) 3.91 (0.154) 3.86 26.9 <—‘\ (0.152)="" (1.06)="" ,="" 5°="" 0.94="" 83%="" wa="" .="" -="" (0.037)="" a=""> /, V :E7 4/ ANODE ‘ :CI 254 ' CATHODE (0.100) 4.70 2.54[o.1oo1 (0.185) PHOTODIODE REFERENCE PLANE DIMENSIONS ARE mm (inches) AND ARE FOR REFERENCE ONLY VS-1 54 R2
www.excelitas.com Page 6 of 9 C30807, 808, 822, 809, and 810EH –Rev.2018.07.09
C30807EH, C30808EH, C30822EH, C30809EH and C30810EH Types
N-type Silicon PIN Photodetectors
For incident radiation at angles ≤ 𝛼/2, the photosensitive surface is totally illuminated.
For incident radiation at angles > 𝛼/2, but ≤ 𝛼′/2, the photosensitive surface is partially illuminated
Figure 4 ̶ Approximate Field of View
Figure 5 ̶ Package Dimension of C30807EH, mm (inches), for reference only.
Figure 6— Package Dimension of C30808EH, mm (inches), for reference .I74In .5Ien 9) Min [4 42mm] [13 Iamm] @ 0m ANODE ~ . n [9 Wm] [0mm] I 3x N/C T (0.2001 03.24% 075m [mama] [6 60mm] [1 91mm] CAIHODE/ FHOIODIDDE CASE GND REFERENCE PLANE DIMENSIONS ARE FOR REFERENCE ONLY V3410“ (CSWH 15.24 (0.600) 10.97 MIN 4.70 13 MIN ‘ (0.432 MIN) (0.185) (0.50) _46 BIA (0.015) f ANODE » 10.16 7 ( (0.400) =% w Xx / 7 == & $45-03 2.77 [0.109] (0200) PHOTODIODE 1337 ((1550) REFERENCE PLANE DIMENSIONS ARE IN mm (inches) AND ARE FOR REFERENCE ONLY VS-422
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C30807EH, C30808EH, C30822EH, C30809EH and C30810EH Types
N-type Silicon PIN Photodetectors
Figure 7 ̶ Package Dimension of C30809EH, mm (inches), for reference only
Figure 6 ̶ Package Dimension of C30808EH, mm (inches), for reference
only
15.20 (0.6001 12.00 40.475) 4.44 , CATHODE (0.1753 fl LC ‘ 5.05 (afom ‘ . ’ ’ x. k ( 7 XJK ANODE ‘ ““5 2.77[o.109] 7 (“"0") PHOTODIODE (2:35:31 REFERENCE PLANE DIMENSIONS ARE IN mm (\nches) AND ARE FOR REFERENCE ONLY VS-168R2 31.75 (1.250) 20.70 (0.815) 6.98 12.70 ‘ (0.275) (0.500) 1.02 f—\ _ (0.040) ' 41 —.\ =1 / _ ANODE 19.05 , + (0.750) K; :1 _ CATHODE 5.10 [0.240] ,._, 27.81 (1-095) PHOTODIODE REFERENCE PLANE DIMENSIONS ARE mm (mcha) AND ARE FOR REFERENCE ONLY VS-169R1
www.excelitas.com Page 8 of 9 C30807, 808, 822, 809, and 810EH –Rev.2018.07.09
C30807EH, C30808EH, C30822EH, C30809EH and C30810EH Types
N-type Silicon PIN Photodetectors
Figure 8 ̶ Package Dimension of C30822EH, mm (inches), for reference only
Figure 9 ̶ Package Dimension of C30810EH, mm (inches), for reference only
o6» ENCELITAS' TECHNOLOGIES
www.excelitas.com Page 9 of 9 C30807, 808, 822, 809, and 810EH –Rev.2018.07.09
C30807EH, C30808EH, C30822EH, C30809EH and C30810EH Types
N-type Silicon PIN Photodetectors
RoHS Compliance
The C30807EH, C30808EH, C30822EH, C30809EH, and C30810EH Type PIN Photodetectors are designed and built to
be fully compliant with the European Union Directive 2011/65/EU – Restriction of the use of certain Hazardous
Substances (RoHS) in Electrical and Electronic equipment.
Warranty
A standard 12-month warranty following shipment applies. Any warranty is null and void if the photodiode window
has been opened.
About Excelitas Technologies
Excelitas Technologies is a global technology leader focused on delivering innovative, customized solutions to meet the
lighting, detection and other high-performance technology needs of OEM customers.
Excelitas has a long and rich history of serving our OEM customer base with optoelectronic sensors and modules for
more than 45 years beginning with PerkinElmer, EG&G, and RCA. The constant throughout has been our innovation
and commitment to delivering the highest quality solutions to our customers worldwide.
From analytical instrumentation to clinical diagnostics, medical, industrial, safety and security, and aerospace and
defense applications, Excelitas Technologies is committed to enabling our customers' success in their specialty end-
markets. Excelitas Technologies has approximately 5,000 employees in North America, Europe and Asia, serving
customers across the world.
Excelitas Technologies
22001 Dumberry Road
Vaudreuil-Dorion, Quebec
Canada J7V 8P7
Telephone: (+1) 450 424 3300
Toll-free: (+1) 800 775 6786
Fax: (+1) 450 424 3345
detection@excelitas.com
Excelitas Technologies
GmbH & Co. KG
Wenzel-Jaksch-Str. 31
D-65199 Wiesbaden
Germany
Telephone: (+49) 611 492 430
Fax: (+49) 611 492 165
detection.europe@excelitas.com
Excelitas Technologies Singapore, Pte. Ltd.
8 Tractor Road
Singapore 627969
Telephone: (+65) 6775 2022 (Main number)
Telephone: (+65) 6770 4366 (Customer Service)
Fax: (+65) 6778-1752
detection.asia@excelitas.com
For a complete listing of our global offices, visit www.excelitas.com/locations
© 2012 Excelitas Technologies Corp. All rights reserved. The Excelitas logo and design are registered trademarks of Excelitas Technologies Corp. All other trademarks not owned by Excelitas Technologies or its subsidiaries that are
depicted herein are the property of their respective owners. Excelitas reserves the right to change this document at any time without notice and disclaims liability for editorial, pictorial or typographical errors.