Part | B80-C1000 |
Category | Discrete => Diodes & Rectifiers => General Purpose Diodes |
Description | 300 V, 1.0 a Silicon Bridge Rectifier |
Company | EIC Semiconductor Incorporated |
Datasheet | Download B80-C1000 Datasheet |
Quote |
Features, Applications |
High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated leads solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 1.29 grams Rating 25 �C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Maximum Recurrent Peak Reverse Voltage Maximum RMS Input Voltage R+C -Load Maximum DC Blocking Voltage Maximum Average Forward Current For Free Air Operation = 45�C R+L -Load C -Load Peak Forward Surge Current Single half sine wave on rated load (JEDEC Method) 125 �C Rating for fusing < 100 ms.) Maximum Series Resistor C-Load VRMS � 10% Maximum load Capacitance 50% -10% Maximum Forward Voltage per Diode = 1.0 Amp. Maximum Reverse Current at Rated Repetitive Peak Voltage per Diode 25 �C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range 1 ) Thermal resistance from Junction to Ambient 0.375" (9.5 mm) lead length P.C. Board with, x 5.5 mm) copper Pads. FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT B380 C1000 BRIDGE OUTPUT FULL WAVE RECTIFIED CURRENT AVERAGE AMPERES BRIDGE OUTPUT FULL WAVE RECTIFIED CURRENT AVERAGE AMPERESFIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES PERCENT OF RATED REVERSE VOLTAGE, FIG.6 - TYPICAL JUNCTION CAPACITANCE PER BRIDGE ELEMENT |
Related products with the same datasheet |
B250-C1000 |
B380-C1000 |
B40-C1000 |
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