APTGF90A60TG by Microchip Technology Datasheet | DigiKey

APTGF90A60TG Datasheet by Microchip Technology

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APTGF90A60TG
APTGF90A60TG – Rev 2 July, 2006
www.microsemi.com 1 - 6
Applicatio
n
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Inter nal thermistor for temperature monitoring
• High level of integration
Benefits
• Outsta ndi ng perfor mance at hi gh freq ue nc y
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS compliant
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
VBUS
Q1
G1
E1
OUT
NTC2
0/VBU S
G2
E2
NTC1
Q2
OUT
OUT
NTC2
VBUS
E1
G2
E2
NTC1
0/VBUS
G2
E2
G1
S
ymbol Parameter Ma
x
ratings Unit
VCES Collector - Emitter Breakdown Voltage 600 V
Tc = 25°C 110
IC Continuous Collector Current Tc = 80°C 90
ICM Pulsed Collector Current Tc = 25°C 315
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation Tc = 25°C 416 W
RBSOA Reverse Bias Safe Operating Area Tj = 150°C 200A @ 600V
VCES = 600V
IC = 90A @ Tc = 80°C
P
hase leg
NPT IGBT Power Module
0Microsemll POWER PRODUCTS GROU P V , Gate Threshold Voltage [m 5 Gate , Emi ner Leakage Current Input Capacitance
APTGF90A60TG
APTGF90A60TG – Rev 2 July, 2006
www.microsemi.com 2 - 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tj = 25°C 250
ICES Zero Gate Voltage Collector Current VGE = 0V
VCE = 600V Tj = 125°C 500 µA
Tj = 25°C 2.0 2.5
VCE(sat) Collector Emitter saturation Voltage VGE =15V
IC = 90A Tj = 125°C 2.2 V
VGE(th) Gate Threshold Voltage VGE = VCE, IC = 1mA 3 5 V
IGES Gate – Emitter Leakage Current VGE = 20 V, VCE = 0V ±150 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 4300
Coes Output Capacitance 470
Cres Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 400
pF
Qg Total gate Charge 330
Qge Gate – Emitter Charge 290
Qgc Gate – Collector Charge
VGE = 15V
VBus = 300V
IC = 90A 200
nC
Td(on) Tur n-on Delay Ti me 26
Tr Rise Time 25
Td(off) Turn-off Delay Time 150
Tf Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 90A
RG = 5 Ω 30
ns
Td(on) Tur n-on Delay Ti me 26
Tr Rise Time 25
Td(off) Turn-off Delay Time 170
Tf Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 90A
RG = 5 Ω 40
ns
Eon Tur n-on Switchi ng Energy Tj = 125°C 4.3
Eoff Turn-off Switching Energy
VGE = 15V
VBus = 400V
IC = 90A
RG = 5 Ω Tj = 125°C 3.5
mJ
Reverse diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 600 V
Tj = 25°C 350
IRM Maximum Reverse Leakage Current VR=600V Tj = 125°C 600
µA
IF DC Forward Current Tc = 70°C 60 A
IF = 60A 1.6 1.8
IF = 120A 1.9 VF Diode Forward Voltage
IF = 60A Tj = 125°C 1.4
V
Tj = 25°C 85
trr Reverse Recovery Time
Tj = 125°C 160
ns
Tj = 25°C 260
Qrr Reverse Recovery Charge
IF = 60A
VR = 400V
di/dt =400A/µs
Tj = 125°C 1400
nC
0MicrosemL POWER PRODUCTS GROU P V L T (, Storage Temperature Range T( Operating Cam: Temperature Torque Mounting torque To Hcahink n—75‘5 1025—» t 0,5 t \ ”f 1 $62 ”2 v t H 1 3 W \ \ N, 2 A I Q3 :05 A0 A 10 5 32 £025 J1me 5" 5,5 ‘go 25 b H‘Bw 30,5‘ ZBJF 80 10,25
APTGF90A60TG
APTGF90A60TG – Rev 2 July, 2006
www.microsemi.com 3 - 6
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.3
RthJC Junction to Case Thermal Resistance Diode 0.65
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To Heatsink M5 2.5 4.7 N.m
Wt Package Weight 160
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 50 kΩ
B 25/85 T
25 = 298.15 K 3952 K
−
=
TT
B
R
RT
11
exp
25
85/25
25
SP4 Package outline (dimensions in mm)
ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
T: Thermistor temperature
RT: Thermistor value at T
ICIOSGMIE POWER PRODUCTS GROU P M 0
APTGF90A60TG
APTGF90A60TG – Rev 2 July, 2006
www.microsemi.com 4 - 6
Typical Performance Curve
Output characteristics (VGE=15V)
TJ=-55°C
TJ=25°C
TJ=125°C
0
50
100
150
200
250
300
350
01234
Ic, Collector Current (A)
VCE, Collecto r to Emitter Vo ltage (V)
250µs Pulse Test
< 0.5% Dut
y
c
y
cle
Output Characteristics (VGE=10V)
TJ=-55 °C
TJ=25°C
TJ=125°C
0
50
100
150
200
250
300
01234
Ic, Collector Current (A)
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% D uty cycle
Transfer Characteristics
TJ=-55°C
TJ=-55°C
TJ=25°C
TJ=125°C
0
50
100
150
200
250
300
012345678910
VGE, Gate to Emitter Voltage (V)
Ic, Collector Current (A)
250µs Pulse Test
< 0.5% D uty cycle
Ic=180A
Ic=90A
Ic=45A
0
1
2
3
4
5
6
7
8
6 8 10 12 14 16
VGE, Gate to Emitter Voltage (V)
VCE
, Collector to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
TJ = 25°C
250µs Pulse Test
< 0.5% D uty cycle Ic=180A
Ic=90A
Ic=45A
0
0.5
1
1.5
2
2.5
3
3.5
4
-50 -25 0 25 50 75 100 125
TJ, Junction Temperature (°C)
VCE, Collecto r to Emitter Vo ltage (V)
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% D uty cycle
VGE = 15V
0.70
0.80
0.90
1.00
1.10
1.20
-50 -25 0 25 50 75 100 125
TJ, Junction Temperature (°C)
Collector to Emitter Breakdown
Voltage (Normalized)
Breakdown Voltage vs Junction Temp.
0
20
40
60
80
100
120
140
-50-250 255075100125150
TC, Case Temperature (°C)
Ic, DC Collector Current (A)
DC Collector Current vs Case Temperature
Gate Charge
VCE=120V
VCE=3 00 V
VCE =480V
0
2
4
6
8
10
12
14
16
18
0 50 100 150 200 250 300 350
Gate Charge (nC)
V
GE, Gate to Emitter Voltage (V)
IC = 90A
TJ = 25°C
0MicrosemL POWER PRODUCTS GROU P
APTGF90A60TG
APTGF90A60TG – Rev 2 July, 2006
www.microsemi.com 5 - 6
VGE
= 1 5V
15
20
25
30
35
25 50 75 100 125 150
ICE, Collector to Emitter Current (A)
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
Tj = 25°C
VCE = 400V
RG = 5ΩVGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
50
100
150
200
250
25 50 75 100 125 150
ICE, Collector to Emitter Current (A)
td(off), Turn-Off Delay Time (ns)
Turn-Off Delay Time vs Collector Current
VCE = 400V
RG = 5Ω
VGE=15V,
TJ=125°C
0
20
40
60
80
25 50 75 100 125 150
ICE, Collector to Emitter Current (A)
tr, Rise Time (ns)
Current Rise Time vs Collector Current
VCE = 400V
RG = 5Ω
TJ = 25°C
TJ = 125°C
0
20
40
60
80
25 50 75 100 125 150
ICE, Collector to Emitter Current (A)
tf, Fall Time (ns)
Current Fall Time vs Collector Current
VCE = 400V, VGE = 15V, RG = 5Ω
TJ=25°C,
VGE=15V
TJ=125°C,
VGE=15V
0
2
4
6
8
0 25 50 75 100 125 150
ICE, Collector to Emitter Current (A)
Eon, Turn-On Energy Loss (mJ)
Turn-On Energy Loss vs Collector Curren
t
VCE = 400V
RG = 5Ω
TJ = 25°C
TJ = 125°C
0
1
2
3
4
5
6
0 25 50 75 100 125 150
ICE, Collector to Emitter Current (A)
Eoff, Turn-off Energy Loss (mJ)
Turn-Off Energy Loss vs Collector Current
VCE = 400V
VGE = 15V
RG = 5Ω
Eon, 180A
Eoff, 180A
Eon, 90A
Eoff, 90A
Eon, 45A
Eoff, 45A
0
4
8
12
16
0 1020304050
Gate Resistance (Ohms)
Switching Energy Losses vs Gate Resistance
Switching Energy Losses (mJ)
VCE = 400V
VGE = 15V
TJ= 125°C
Eon, 180A
Eoff, 180A
Eon, 9 0A
Eoff, 90A
Eon, 45A
Eoff, 45A
0
2
4
6
8
10
0 255075100125
TJ, Junction Temperature (°C)
Switching Energy Losses (mJ)
Switching Energy Losses vs Jun ction Temp.
VCE = 40 0V
VGE = 15V
RG = 5Ω
0MicrosemL POWER PRODUCTS GROU P
APTGF90A60TG
APTGF90A60TG – Rev 2 July, 2006
www.microsemi.com 6 - 6
Cies
Cres
Coes
100
1000
10000
0 1020304050
C, Capacitance (pF)
Capacitance vs Collector to Emitter Voltage
VCE, Collector to Emitter Voltage (V)
0
50
100
150
200
250
0 200 400 600 800
IC, Collector Current (A)
Reverse Bias Safe Operating Area
VCE, Collector to Emitter Voltage (V)
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Operating Frequency vs Collector Current
Hard
switching
ZCS
ZVS
0
40
80
120
160
200
20 40 60 80 100 120
IC, Collector Curr ent (A)
Fmax, Operating Frequency (kHz)
VCE = 400V
D = 50%
RG = 5Ω
TJ = 125°C
TC = 75°C
M icrose mi re se rve s the rig ht to c ha nge, witho ut notice , t he s pe cificatio ns and info rmatio n co nta ine d he re in
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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