-Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Extended VGS range (�25) for battery pack applications

These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.

A X Feature F :MOSFET 4407P X Package S: SOP-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel

This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product.

Symbol VDS VGS ID IDM IS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note TA=25�C TA=70�C Pulsed Drain Current (Note 2) Continuous Source Current (Diode Conduction) (Note 1) TA=25�C Power Dissipation (Note 1) TA=70�C Operating and Storage Junction Temperature Range Rating to 150 Units �C

Symbol RJC RJA Parameter Maximum Junction-to-Case (Note 1) Maximum Junction-to-Ambient (Note 1) sec Maximum 25 50 Units �C/W

Symbol Static V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) Parameter Drain-Source breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current (Note 3) Drain-Source On-Resistance (Note 3) Test Conditions VGS=0V, ID=-250uA VDS= VGS, VGS=-10V, ID=-13A Min. -1 -50 Limits Typ. Max. S V Unit A m

gfs Forward Tranconductance (Note 3) VSD Diode Forward Voltage Dynamic (Note 4) Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Switching td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall-Time

Note 3: Pulse test: < 300us duty cycle < 2%. Note 4: Guaranteed by design, not subject to production testing.