ST2SA733 datasheet - PNP Silicon Epitaxial Planar Transistor

Details, datasheet, quote on part number: ST2SA733
PartST2SA733
Category
DescriptionPNP Silicon Epitaxial Planar Transistor
CompanySemtech Corporation
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Features, Applications

PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, Y, P and L, according to its DC current gain. As complementary type the NPN transistor 2SC945 is recommended. On special request, these transistors can be manufactured in different pin configurations.

Absolute Maximum Ratings (Ta = 25 oC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO -IC Ptot Tj TS Value to +150 Unit mA mW

(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)

Characteristics Tamb=25 oC Symbol DC Current Gain -VCE=6V, -IC=1mA Current Gain Group Collector Base Breakdown Voltage at -IC=100A Collector Emitter Breakdown Voltage at -IC=10mA Emitter Base Breakdown Voltage at -IE=10A Collector Cutoff Current at -VCB=60V Emitter Cutoff Current at -VEB=5V Collector Saturation Voltage -IC=100mA, -IB=10mA Base Emitter Voltage -VCE=6V, -IC=1mA Gain Bandwidth Product -VCE=6V, -IC=10mA Output Capacitance -VCB=10V, f=1MHz Noise Figure 20 dB COB 50 180 MHz -VBE(on) 0.8 V -VCE(sat) 0.3 V -IEBO 0.1 A -ICBO 0.1 A -V(BR)EBO 5 V -V(BR)CEO 50 V -V(BR)CBO 60 V hFE Min. Typ. Max. Unit




 

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