62000-004 - GaAs LIGHT EMITTING DIODE PILL PACK
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62000-004 Datasheet PDF

Micropac Industries

Posted Apr 3, 2005 (Stock #: 247241)



Part Number 62000-004
Manufacturers Micropac Industries
Description GaAs LIGHT EMITTING DIODE PILL PACK
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62000 GaAs LIGHT EMITTING DIODE “PILL PACK” (TYPE GS1140) Mii OPTOELECTRONIC PRODUCTS DIVISION Features: • • • • • Hermetically sealed High output, 940nm Small package PC board mountable Spectrally matched to the 61055 series detector Applications • • • • Incremental encoding Reflective sensors Position sensors Level sensors DESCRIPTION The 62
More View 000 is a P-N GaAs Infrared Light Emitting Diode in a lensed “pill” package designed to be mounted in a double-clad printed circuit board. It is spectrally and mechanically matched to companion phototransistors and photodarlingtons with it’s narrow beam angle lens and small size which make it ideal for use in optical encoders, card reader arrays, etc. Available binned to customer specifications and/or screened to MIL-PRF-19500. ABSOLUTE MAXIMUM RATINGS Storage Temperature...-65°C to +150°C Operating Temperature ....-65°C to +125°C Reverse Voltage( at 25°C case temperature) ... 2Vdc Forward Current-Continuous .100mA Soldering Temperature (3 Minutes) . 240°C Package Dimensions Schematic Diagram 0.019 [0.48] 0.009 0.23] CERAMIC LENS R0.010 ±0.001 [0.25] 0.092 [2.34] 0.084 [2.13] Ø0.061 [1.55] Ø0.058 [1.47] ANODE 0.067 [1.70] 0.063 [1.60] CATHODE 0.010 [0.25] 0.005 [0.013] 0.088 [2.24] 0.082 [2.08] 0.115 [2.92] 0.102 [2.59] ALL DIMENSIONS ARE IN INCHES [MILLIMETERS] 0.24 [0.61] 0.016 [0.41] MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: [email protected] 6 - 23 62000 ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. GaAs LIGHT-EMITTING DIODE “PILLPACKAGE” PARAMETER Output Power 62000-X01 62000-X02 62000-X03 62000-X04 62000-XXX 62000-XXX 62000-XXX 62000-XXX 62000-XXX 62000-XXX SYMBOL PO MIN 0.25 0.40 1.0 1.5 TYP 0.3 0.65 1.2 1.6 MAX UNITS mW TEST CONDITIONS IF = 50mA NOTE Forward Voltage Reverse Breakdown Voltage Radiation Rise Time Peak Wavelength Beam Angle Forward Max Continuous Current VF BVR 2 0.7 940 20 1.6 V V µs nm degrees IF =50mA IB = 10µA tR λP IF =50mA 1 θ IF(MAX) 100 mA 25°C Case NOTES: 1. Low profile 40° lens also available. INSTANTANEOUS POWER OUTP
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