Details, datasheet, quote on part number: WS57C49C-70D
| Part | WS57C49C-70D |
| Category | Memory => ROM => OTP ROM |
| Description | WS57C49C High Speed 8K X 8 CMOS Prom/rPROM |
| Company | ST Microelectronics, Inc. |
| Datasheet | Download WS57C49C-70D Datasheet |
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| Cross ref. | Similar parts: CY7C264-55WC, ws57c49c-70d |
| Quote |
| Features, Applications |
Pin Compatible with Bipolar PROMs Immune to Latch-UP The is a High Performance 64K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. A further advantage of the WS57C49C over Bipolar PROM devices is the fact that it utilizes a proven EPROM technology. This enables the entire memory array to be tested for switching characteristics and functionality after assembly. Unlike devices which cannot be erased, every in a windowed package is 100% tested with worst case test patterns both before and after assembly. The WS57C49C is configured in the standard Bipolar PROM pinout which provides an easy upgrade path for systems which are currently using Bipolar PROMs, or its predecessor, the WS57C49B. PARAMETER Address Access Time (Max) CS to Output Valid Time (Max) 25 nsStorage + 150�C Voltage on any Pin with Respect to +7V VPP with Respect + 13V ESD Protection..................................................> 2000V PINS MODE Read Output Disable Program Verify CS1/VPP VIL VIH VPP VIL VCC OUTPUTS DOUT High Z DIN DOUT Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect device reliability. DC READ CHARACTERISTICS Over Operating Range. (See Above)SYMBOL VIL VIH VOL VOH PARAMETER Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage VCC Active Current (CMOS) (Note 3) (Note 3) IOL 16 mA IOH �4 mA VCC = 0 MHz (Note 1), Output Not Loaded Add 3 mA/MHz for AC Operation VCC = 0 MHz (Note 2), Output Not Loaded Add 3 mA/MHz for AC Operation VIN 5.5V or Gnd VOUT V or Gnd Comm'l Industrial Military Comm'l Industrial Military TEST CONDITIONS MIN �0.1 2.0 MAX 0.8 VCC 0.3 0.4 UNITS mA �A VCC Active Current (TTL) Input Leakage Current Output Leakage Current1. CMOS inputs: GND 0.3V or VCC 0.3V. 2. TTL inputs: VIL 0.8V, VIH 2.0V. 3. These are absolute voltages with respect to device ground pin and include all overshoots due to system and/or tester noise. Do not attempt to test these values without suitable equipment. AC READ CHARACTERISTICS Over Operating Range. (See Above)PARAMETER Address to Output Delay CS1 to Output Delay Output Disable to Output Float* Address to Output Hold SYMBOL tACC tCS tDF tOH 57C49C-55 57C49C-70 |
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