Details, datasheet, quote on part number: 2SD879
| Part | 2SD879 |
| Category | Discrete => Transistors => Bipolar => General Purpose |
| Description | NPN Epitaxial Planar Silicon Transistor, 1,5C, 3V Strobe Application |
| Company | Sanyo Semiconductor Corporation |
| Datasheet | Download 2SD879 Datasheet |
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| Quote |
| Features, Applications |
Features In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. The charge time is approximately 1 second faster than that of germanium transistors. Less power dissipation because of low Collector-toEmitter Voltage VCE(sat), permitting more flashes of light to be emitted. Small package and large allowable collector dissipation (TO-92, PC=750mW). Large current capacity and highly resistant to breakdown. Excellent linearity of hFE in the region from low current to high current. SpecificationsParameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEX VCEO VEBO IC ICP PC Tj Tstg 100ms single pulse Conditions 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-92 EIAJ : SC-43 SANYO : NPParameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VCE=2V, IC=3A (pulse) IC=3A, IB=60mA (pulse) MHz pF V Conditions Ratings min typ max 1.0 Unit �A Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness HeadquatersTOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol V(BR)CBO IC=10�A, IE=0 V(BR)CEX IC=1mA, VBE=3V V(BR)CEO IC=1mA, RBE= V(BR)EBO IE=10�A, IC=0 Conditions Ratings min typ max Unit |
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