Details, datasheet, quote on part number: 2SD0966
| Part | 2SD0966 |
| Category | Discrete => Transistors => Bipolar => General Purpose |
| Description | V<SUB>CEO</SUB>(V) = 20 ;; I<SUB>C</SUB>(A) = 5 ;; HFE(min) = 230 ;; HFE(max) = 600 ;; Package = TO-92L-A1 |
| Company | Panasonic Industrial Company/Electronic Components |
| Datasheet | Download 2SD0966 Datasheet |
| Features, Applications |
Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with the lowvoltage power supply. Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating to +150 Unit �C Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE Collector-emitter saturation voltage *1 Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) fT Cob Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank to 600 Note) The part number in the parenthesis shows conventional part number.Collector output capacitance C (pF) (Common base, input open circuited) ob Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. |
| Related products with the same datasheet |
| 2SD966 |
| Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components |
| 2SD09662SD966 |
| 2SD0968 |
| 2SD0968 Silicon NPN Epitaxial Planer Type Small Signal Transistor |
| 2SD0968A VCEO(V) = 120 ;; IC(A) = 0.5 ;; HFE(min) = 130 ;; HFE(max) = 330 ;; Package = MiniP3-F1 |
| 2SD0973 |
| 2SD0973 Silicon NPN Epitaxial Planer Type Small Signal Transistor |
| 2SD0973A VCEO(V) = 50 ;; IC(A) = 1 ;; HFE(min) = 85 ;; HFE(max) = 340 ;; Package = M-A1 |
| 2SD1010 VCEO(V) = 40 ;; IC(A) = 0.05 ;; HFE(min) = 400 ;; HFE(max) = 2000 ;; Package = TO-92-A1TO-92-B1 |
| 2SD1030 |
| 2SD1051 VCEO(V) = 40 ;; IC(A) = 1.5 ;; HFE(min) = 80 ;; HFE(max) = 220 ;; Package = M-A1 |
| 2SD1119 VCEO(V) = 25 ;; IC(A) = 3 ;; HFE(min) = 230 ;; HFE(max) = 600 ;; Package = MiniP3-F1 |
| 2SD1149 VCEO(V) = 100 ;; IC(A) = 0.02 ;; HFE(min) = 400 ;; HFE(max) = 1200 ;; Package = Mini3-G1 |
| 2SD1198 VCEO(V) = 25 ;; IC(A) = 1 ;; HFE(min) = 4000 ;; HFE(max) = 20000 ;; Package = M-A1 |
| 2SD1199 VCEO(V) = 40 ;; IC(A) = 0.05 ;; HFE(min) = 400 ;; HFE(max) = 2000 ;; Package = M-A1 |
| 2SD1205 VCEO(V) = 25 ;; IC(A) = 0.5 ;; HFE(min) = 4000 ;; HFE(max) = 20000 ;; Package = M-A1 |
| 2SD1211 VCEO(V) = 120 ;; IC(A) = 0.5 ;; HFE(min) = 130 ;; HFE(max) = 330 ;; Package = TO-92L-A1 |
| 2SD1244 VCEO(V) = 20 ;; IC(A) = 3 ;; HFE(min) = 230 ;; HFE(max) = 600 ;; Package = M-A1 |
| 2SD1249 VCEO(V) = 250 ;; IC(A) = 0.75 ;; HFE(min) = 40 ;; HFE(max) = 250 ;; Package = N-A1N-G1 |
| 2SD1250 VCEO(V) = 150 ;; IC(A) = 2 ;; HFE(min) = 60 ;; HFE(max) = 240 ;; Package = N-A1N-G1 |
| 2SD1251 Silicon NPN Triple Diffusion Junction Type ( For Power Amplification ) |
| 2SD1251A VCEO(V) = 80 ;; IC(A) = 4 ;; HFE(min) = 40 ;; HFE(max) = ;; Package = N-A1N-G1 |
|
2SB0941 : Silicon PNP Epitaxial Planar Type Power Transistor UNRF2A5 : RETs (Resistor Equipped transistors) Marking = 1X ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = ;; Package = ML3-N2 EEE-1CA221UAP : 220�F Aluminum Capacitor Radial, Can - SMD 16V; CAP ALUM 220UF 16V 20% SMD Specifications: Capacitance: 220�F ; ESR (Equivalent Series Resistance): - ; Features: General Purpose ; Lifetime @ Temp.: 2000 Hrs @ 85�C ; Size / Dimension: 0.315" Dia (8.00mm) ; Lead Spacing: - ; Surface Mount Land Size: 0.327" L x 0.327" W (8.30mm x 8.30mm) ; Mounting Type: Surface Mount ; Packa EEE-FK1V221AP : 220�F Aluminum Capacitor Radial, Can - SMD 35V; CAP ALUM 220UF 35V 20% SMD Specifications: Capacitance: 220�F ; ESR (Equivalent Series Resistance): - ; Features: General Purpose ; Lifetime @ Temp.: 2000 Hrs @ 105�C ; Size / Dimension: 0.315" Dia (8.00mm) ; Lead Spacing: - ; Surface Mount Land Size: 0.327" L x 0.327" W (8.30mm x 8.30mm) ; Mounting Type: Surface Mount ; Pack EEV-HD2A3R3P : 3.3�F Aluminum Capacitor Radial, Can - SMD 100V; CAP ALUM 3.3UF 100V 20% SMD Specifications: Capacitance: 3.3�F ; ESR (Equivalent Series Resistance): - ; Features: General Purpose ; Lifetime @ Temp.: 5000 Hrs @ 105�C ; Size / Dimension: 0.315" Dia (8.00mm) ; Lead Spacing: - ; Surface Mount Land Size: 0.327" L x 0.327" W (8.30mm x 8.30mm) ; Mounting Type: Surface Mount ; Pack ECQ-V1H334JL3 : 0.33�F Film Capacitor Radial; CAP FILM 0.33UF 50VDC RADIAL Specifications: Capacitance: 0.33�F ; Tolerance: �5% ; Dielectric Material: Polyester, Metallized - Stacked ; Package / Case: Radial ; Packaging: Tape & Box (TB) ; Lead Spacing: 0.197" (5.00mm) ; ESR (Equivalent Series Resistance): - ; Mounting Type: Through Hole ; Features: General Purpose ; Le ECW-H20122RHV : 1200pF Film Capacitor Radial; CAP FILM 1200PF 2KVDC RADIAL Specifications: Capacitance: 1200pF ; Tolerance: �3% ; Dielectric Material: Polypropylene, Metallized ; Package / Case: Radial ; Packaging: Tape & Box (TB) ; Lead Spacing: 0.295" (7.50mm) ; ESR (Equivalent Series Resistance): - ; Mounting Type: Through Hole ; Features: High Frequency and High St ERJ-S1DJ432U : 4.3K Ohm 0.75W, 3/4W Chip Resistor - Surface Mount; RES ANTI-SULFUR 4.3K OHM 5% 2010 Specifications: Resistance (Ohms): 4.3K ; Power (Watts): 0.75W, 3/4W ; Tolerance: �5% ; Packaging: Tape & Reel (TR) ; Composition: Thick Film ; Temperature Coefficient: �100ppm/�C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant MAZ8150GML : Diode - Zener - Single Discrete Semiconductor Product 50nA @ 11V 15V 150mW Surface Mount; DIODE ZENER 15V 150MW S-MINI 2P Specifications: Voltage - Zener (Nom) (Vz): 15V ; Power - Max: 150mW ; Impedance (Max) (Zzt): 40 Ohm ; Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA ; Current - Reverse Leakage @ Vr: 50nA @ 11V ; Tolerance: - ; Mounting Type: Surface Mount ; Package / Case: SC-90, SOD-323F ; Packaging: Tape & Ree ERJ-2GEJ395X : 3.9M Ohm 0.1W, 1/10W Chip Resistor - Surface Mount; RESISTOR 3.9M OHM 1/10W 5% 0402 Specifications: Resistance (Ohms): 3.9M ; Power (Watts): 0.1W, 1/10W ; Tolerance: �5% ; Packaging: Cut Tape (CT) ; Composition: Thick Film ; Temperature Coefficient: -400/ +150ppm/�C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant ERJ-3GEYJ471V : 470 Ohm 0.1W, 1/10W Chip Resistor - Surface Mount; RES 470 OHM 1/10W 5% 0603 SMD Specifications: Resistance (Ohms): 470 ; Power (Watts): 0.1W, 1/10W ; Tolerance: �5% ; Packaging: Cut Tape (CT) ; Composition: Thick Film ; Temperature Coefficient: �200ppm/�C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant ERG3DJ114 : RESISTOR, METAL OXIDE FILM, 3 W, 5 %, 110000 ohm, THROUGH HOLE MOUNT Specifications: Category / Application: General Use ; Technology / Construction: MetalOxide ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Resistance Range: 110000 ohms ; Tolerance: 5 +/- % ; Power Rating: 3 watts (0.0040 HP) ; Operating DC Voltage: 500 volts ; Operating Temperatur |
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