2SD096,2SD966 by Panasonic Electronic Components Datasheet | DigiKey

2SD096,2SD966 Datasheet by Panasonic Electronic Components

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Transistors
1
Publication date: April 2003 SJC00201BED
2SD0966 (2SD966)
Silicon NPN epitaxial planar type
For low-frequency amplification
For stroboscope
■Features
•Low collector-emitter saturation voltage VCE(sat)
•Satisfactory operation performances at high efficiency with the low-
voltage power supply.
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 40 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 7V
Collector current IC5A
Peak collector current ICP 8A
Collector power dissipation PC1W
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 020V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 07V
Collector-base cutoff current (Emitter open)
ICBO VCB = 10 V, IE = 0 0.1 µA
Emitter-base cutoff current (Collector open)
IEBO VEB = 7 V, IC = 0 0.1 µA
Forward current transfer ratio *1hFE1 *2VCE = 2 V, IC = 0.5 A 180 600
hFE VCE = 2 V, IC = 2 A 150
Collector-emitter saturation voltage *1VCE(sat) IC = 3 A, IB = 0.1 A 1 V
Transition frequency fTVCB = 6 V, IE = −50 mA, f = 200 MHz 150 MHz
Collector output capacitance Cob VCB = 20 V, IE = 0, f = 1 MHz 50 pF
(Common base, input open circuited)
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
5.9
±0.2
0.7
±0.1
4.9
±0.2
8.6
±0.2
0.7
+0.3
–0.2
13.5
±0.5
2.54
±0.15
(3.2)
(1.27)(1.27)
0.45
+0.2
–0.1
0.45
+0.2
–0.1
132
1 : Emitter
2 : Collector
3 : Base
EIAJ : SC-51
TO-92L-A1 Package
Rank P Q R
hFE1 180 to 270 230 to 380 340 to 600
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).
Maintenance/
Discontinued
Maintenance/Discontinued includes following four Product lifecycle stage.
planed maintenance type
maintenance type
planed discontinued typed
discontinued type
Please visit following URL about latest information.
http://www.semicon.panasonic.co.jp/en/
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2SD0966
2SJC00201BED
VCE(sat) IChFE ICfT IE
PC TaIC VCE IC VBE
Cob VCB
0 16040 12080
0
1.2
1.0
0.8
0.6
0.4
0.2
Collector power dissipation P
C
(W)
Ambient temperature T
a
(°C)
0 2.42.01.60.4 1.20.8
0
2.4
2.0
1.6
1.2
0.8
0.4
T
a
= 25°C
I
B
= 7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
02.01.60.4 1.20.8
0
6
5
4
3
2
1
V
CE
= 2 V
T
a
= 75°C−25°C
25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(A)
0.01 0.1 1 10
0.001
0.01
0.1
1
10 I
C
/ I
B
= 30
T
a
= 75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(A)
0.01 0.1 1 10
0
600
500
400
300
200
100
T
a
= 75°C
25°C
−25°C
V
CE
= 2 V
Forward current transfer ratio h
FE
Collector current I
C
(A)
− 0.01
− 0.1 −1−10
0
400
300
100
200
V
CB
= 6 V
T
a
= 25°C
Transition frequency f
T
(MHz)
Emitter current I
E
(A)
1 10 100
0
100
80
60
40
20
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector current V
CB
(V)
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
This product complies with the RoHS Directive (EU 2002/95/EC).
Maintenance/
Discontinued
Maintenance/Discontinued includes following four Product lifecycle stage.
planed maintenance type
maintenance type
planed discontinued typed
discontinued type
Please visit following URL about latest information.
http://www.semicon.panasonic.co.jp/en/
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Maintenance/
Discontinued
Maintenance/Discontinued includes following four Product lifecycle stage.
planed maintenance type
maintenance type
planed discontinued typed
discontinued type
Please visit following URL about latest information.
http://www.semicon.panasonic.co.jp/en/