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2SB1205 Datasheet by onsemi
Ordering number: ENZIIAC
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D0512 TKIM TC-00002845/N2503TN (KT)/92098HA (KT)/8219MO/4137KI/4116KI, TS No.2114-1/9
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
September, 2013
2SB1205
Bipolar Transistor
–20V, –5A, Low VCE(sat), PNP Single TP/TP-FA
Applications
• Flash, voltage regulators, relay drivers, lamp drivers
Features
• Adoption of FBET, MBIT processes • Low saturation voltage
• Fast switching speed • Large current capacity
• Small and slim package making it easy to make 2SB1205-applied sets smaller
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO --25 V
Collector-to-Emitter Voltage VCEO --20 V
Emitter-to-Base Voltage VEBO -- 5 V
Collector Current IC-- 5 A
Collector Current (Pulse) ICP -- 8 A
Continued on next page.
Package Dimensions unit : mm (typ) Package Dimensions
unit : mm (typ)
7518-003 7003-003
Ordering number : EN2114C
Product & Package Information
• Package : TP • Package : TP-FA
•
JEITA, JEDEC : S
C-64, TO-251 •
JEITA, JEDEC : S
C-63, TO-252
•
Minimum Packing Quantity
:
500 pcs./bag •
Minimum Packing Quantity
:
700 pcs./reel
Marking Packing Type (TP-FA) : TL Electrical Connection
(TP, TP-FA)
TL
6.5
5.0
2.3
0.5
12
4
3
0.85
0.7
1.2
0.6 0.5
2.3 2.3
7.07.5
1.6
0.8
5.5 1.5
1 : Base
2 : Collecto
r
3 : Emitter
4 : Collecto
r
TP
6.5
5.0
2.3
0.5
12
4
3
0.85
0.6
0.5
1.2
1.2
2.3 2.3
7.0
2.5
5.5 1.5
0.8
0 to 0.2
1 : Base
2 : Collecto
r
3 : Emitter
4 : Collecto
r
TP-FA
2SB1205S-E
2SB1205T-E 2SB1205S-TL-E
2SB1205T-TL-E
2,4
3
1
B1205
LOT No.
RANK
UT
:
T
i
2SB1205
No.2114-2/9
Continued from preceding page.
Parameter Symbol Conditions Ratings Unit
Base Current IB--0.5 A
Collector Dissipation PC1W
Tc=25°C10W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Collector Cutoff Current ICBO VCB=--20V, IE=0A --500 nA
Emitter Cutoff Current IEBO VEB=--4V, IC=0A --500 nA
DC Current Gain hFE1V
CE=--2V, IC=500mA 100* 400*
hFE2V
CE=--2V, IC=--4A 60
Gain-Bandwidth Product fTVCE=--5V, IC=--200mA 320 MHz
Output Capacitance Cob VCB=--10V, f=1MHz 60 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=--3A, IB=--60mA --250 --500 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=--3A, IB=--60mA --1.0 --1.3 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=--10μA, IE=0A --25 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=--1mA, RBE=∞ --20 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=--10μA, IC=0A --5 V
Turn-On Time ton See specifi ed Test Circuit.
40
ns
Storage Time tstg
200
ns
Fall Time tf10 ns
* : The 2SB1205 is classifi ed by 500mA hFE as follows :
Rank R S T
hFE 100 to 200 140 to 280 200 to 400
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
2SB1205S-E TP 500pcs./bag
Pb Free
2SB1205T-E TP 500pcs./bag
2SB1205S-TL-E TP-FA 700pcs./reel
2SB1205T-TL-E TP-FA 700pcs./reel
VRRBRL
VCC= --10VVBE=5V
++
50Ω
INPUT
OUTPU
T
100μF 470μF
PW=20μsIB1
D.C.≤1% IB2
IC=10IB1= --10IB2= --2A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
2SB1205
No.2114-3/9
IC -- VCE
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- V
IC -- VCE
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- V
--5
--4
--3
--2
--1
00 --0.2 --0.4 --0.8--0.6 --1.0
ITR09216
IB=0
--10mA
--20mA
--30mA
--40mA
--60mA
--50mA
--5
--4
--3
--2
--1
00 --1 --2 --4--3 --5
ITR09217
IB=0
--5mA
--10mA
--15mA
--20mA
--25mA
--30mA
--35mA
--40mA
From top
--100mA
--90mA
--80mA
--70mA
VCE(sat) -- IC
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
hFE -- IC
Collector Current, IC -- A
DC Current Gain, hFE
fT -- IC
Collector Current, IC -- A
Gain-Brandwidth Product, fT -- MHz
Cob -- VCB
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
VBE(sat) -- IC
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- mV
--0.1--0.01
5235 --1.0
23 5 23 5 --10
--1000
3
2
7
5
3
2
7
5
--100
--10
ITR09222
--0.1 --1.0--0.01
57 723 5 72235 3
1000
3
2
7
5
3
7
5
100
2
ITR09220
--1.0 --10
375375223
3
2
3
2
100
7
10
5
ITR09221
IC / IB=50
Ta= --25°C
25°C
75
°
C
--0.01
5235 --10
--0.1 23 5 23 5
--1.0
--10
--1.0
3
2
7
5
7
5
3
ITR09223
IC / IB=50
Ta= --25°C
25
°
C
75°C
f=1MHz
VCE= --5V
VCE= --2V
--6
--1
--2
--4
--3
--5
00 --1.2--1.0--0.8--0.6--0.4--0.2
ITR09218
Ta=75°C
25°C
--25°C
100
--0.01
1000
3
2
2
7
5
3
7
5
--0.1
23 5 23 5 23 55--1.0 --10
VCE= --2V
ITR09219
Ta=75
°
C
25
°
C
--25°C
2SB1205
No.2114-4/9
PC -- Ta
A S O
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
Ambient Temperature, Ta -- °C
Collector Dissipation, PC -- W
ITR09225
12
4
2
1
6
8
10
00 160120 14010080604020
ITR09224
Tc=25°C
Single pulse
--1.0--0.1 --10
23 57 23 5 23 57
--10
3
2
2
5
3
2
5
5
--1.0
--0.1
3
DC operation(Ta=25°C)
DC operation(Tc=25°C)
1ms
10ms
100ms
ICP= --8A
IC= --5A
No heat sink
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No.2114-5/9
Taping Specifi cation
2SB1205S-TL-E, 2SB1205T-TL-E
um: um
1m 1 L Sm ‘
fl
a “m u an: n
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m1“ m m “(I . “mm
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2SB1205
No.2114-6/9
Outline Drawing Land Pattern Example
2SB1205S-TL-E, 2SB1205T-TL-E
Mass (g) Unit
0.282
* For reference
mm Unit: mm
7.0
1.5
2.3
2.02.5
2.3
7.0
,Panklng Format
Pukagehme Maxlmlm Number of devmes Contalned (pas)
Bag Inns: llax Outer box
TP ljil Ail AiZ
503 moan ED.UDO 50.000
Packlug formall'Dlrrleuslons:m1lexlelnalfl
IJLer bnx Outer box
Bil 1,3,1 AiZ
MEXZZEXES HOXZSCXEOU 470>2SB1205
No.2114-7/9
Bag Packing Specifi cation
2SB1205S-E, 2SB1205T-E
Hm 11m
max 2
w M
©1168}?
nus-n2 w x x #
W \ \ \ , Hm
um; 51
Mm
T 7 1 V
n m :munu
2SB1205
No.2114-8/9
Outline Drawing
2SB1205S-E, 2SB1205T-E
Mass (g) Unit
0.315
* For reference
mm
2SB1205
PS No.2114-9/9
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