Details, datasheet, quote on part number: 2N6977
| Part | 2N6977 |
| Category | Discrete => IGBTs (Insulated Gate Bipolar Transistors) |
| Description | 5a, 400v And 500v N-channel Igbts |
| Company | Intersil Corporation |
| Datasheet | Download 2N6977 Datasheet |
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| Features, Applications |
Features 5A, 400V and 500V VCE(ON) 2V TFI 1�s, 0.5�s Low On-State Voltage Fast Switching Speeds High Input Impedance ApplicationsPower Supplies Motor Drives Protection Circuits Description The 2N6976, 2N6977 and the 2N6978 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits. PACKAGING AVAILABILITY PART NUMBER 2N6977 2N6978 PACKAGE TO-204AA BRANDNOTE: When ordering, use the entire part number. Absolute Maximum Ratings = +25oC, Unless Otherwise Specified. Collector-Emitter Voltage. VCES Collector-Gate Voltage (RGE = 1M).VCGR Reverse Collector-Emitter Voltage.VCES(REV.) Gate-Emitter Voltage.VGE Collector Current Continuous. IC Collector Current Pulsed. ICM Power Dissipation Total +25oC. PD Power Dissipation Derating > +25oC Operating and Storage Junction Temperature Range. TJ, TSTG NOTE: 1. JEDEC registered value. 2N6975/2N6977 (Note +150 2N6976/2N6978 (Note to +150 UNITS W/oC oC HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright = +25oC, Unless Otherwise Specified LIMITS 2N6975/2N6977 PARAMETERS Collector-Emitter Breakdown Voltage Gate Threshold Voltage SYMBOL BVCES VGE(TH) lCES TEST CONDITIONS = 1 mA, VGE = 0 VGE = VCE, = 1mA VCE = 400V VCE = +125oC VCE = 400V VCE = 500V Gate-Emitter Leakage Current IGES IECS VCE(ON) VGE = �20V, VCE = 0V RGE = 0, VEC = 5A, VGE = 10A, VGE = 20V Gate-Emitter Plateau Voltage VGEP QG(ON) tD(ON) tR tD(ON) tFI = 5A, VCE = 5A, VCE = 5A VCE(CLP) = +125oC VGE 2N6977 2N6978 Turn-Off Energy Loss per Cycle (Off Switching Dissipation= WOFF x Frequency) WOFF = 5A VCE(CLP) = +125oC VGE 2N6977 2N6978 MIN 400 (Note 1) 2 (Note 1) MAX 2N6976/2N6978 MIN 500 (Note 1) 2 (Note 1) MAX UNITS V Reverse Collector-Emitter Leakage Current Collector-Emitter On VoltageTurn-On Delay Time Rise Time Turn-Off Delay Time Thermal Resistance Junction-to-Case NOTE: 1. JEDEC registered value. EFFECTIVE TRANSIENT THERMAL IMPEDANCE (NORMALIZED) VGE = VCE = 1mA ZJC(t) = r(t)RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(PEAK) TC = P(PEAK)ZJC(t) FIGURE 1. TYPICAL NORMALIZED GATE THRESHOLD VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE FOR ALL TYPES FIGURE 2. NORMALIZED THERMAL RESPONSE CHARACTERISTICS FOR ALL TYPES10 ICE, COLLECTOR CURRENT (A) ICE, COLLECTOR CURRENT (A) PULSE TEST, VCE = 10V PULSE DURATION = 80�s DUTY CYCLE = 0.5% MAX 7.5 10 PULSE TEST PULSE DURATION = 80�s DUTY CYCLE = 0.5% MAXFIGURE 5. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE AS A FUNCTION OF COLLECTOR CURRENT FOR ALL TYPES FIGURE 6. CAPACITANCE AS A FUNCTION OF COLLECTORTO-EMITTER VOLTAGE FOR ALL TYPES |
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