NW
© Semiconductor Components Industries, LLC, 2010
February, 2010 − Rev. 4
1Publication Order Number:
2N4401/D
2N4401
General Purpose
Transistors
NPN Silicon
Features
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage VCEO 40 Vdc
Collector − Base Voltage VCBO 60 Vdc
Emitter − Base Voltage VEBO 6.0 Vdc
Collector Current − Continuous IC600 mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD625
5.0
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
MARKING DIAGRAM
2N
4401
AYWW G
G
2N4401 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
123
12
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 1
2N4401
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 −Vdc
Collector−Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 60 −Vdc
Emitter−Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 6.0 −Vdc
Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV −0.1 mAdc
Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX −0.1 mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE 20
40
80
100
40
−
−
−
300
−
−
Collector−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat) −
−
0.4
0.75
Vdc
Base−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat) 0.75
−
0.95
1.2
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT250 −MHz
Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb −6.5 pF
Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb −30 pF
Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.0 15 k W
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10−4
Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 500 −
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 30 mmhos
SWITCHING CHARACTERISTICS
Delay Time (VCC = 30 Vdc, VBE = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td−15 ns
Rise Time tr−20 ns
Storage Time (VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts−225 ns
Fall Time tf−30 ns
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
Device Package Shipping†
2N4401 TO−92 5000 Units / Bulk
2N4401G TO−92
(Pb−Free)
5000 Units / Bulk
2N4401RLRA TO−92 2000 / Tape & Reel
2N4401RLRAG TO−92
(Pb−Free)
2000 / Tape & Reel
2N4401RLRMG TO−92
(Pb−Free)
2000 / Tape & Ammo Box
2N4401RLRP TO−92 2000 / Tape & Ammo Box
2N4401RLRPG TO−92
(Pb−Free)
2000 / Tape & Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2N4401
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3
Figure 1. Turn−On Time Figure 2. Turn−Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+16 V
-2.0 V < 2.0 ns
0
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
1.0 kW
+30 V
200 W
CS* < 10 pF
+16 V
-14 V
0
< 20 ns
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
1.0 kW
+30 V
200 W
CS* < 10 pF
-4.0 V
Figure 3. Capacitances
REVERSE VOLTAGE (VOLTS)
7.0
10
20
30
5.0
Figure 4. Charge Data
IC, COLLECTOR CURRENT (mA)
0.1 2.0 5.0 10 20
2.0
30 50
CAPACITANCE (pF)
Q, CHARGE (nC)
3.0
2.0
3.0
5.0
7.0
10
1.0
10 20 50 70 100 200
0.1 300 500
0.7
0.5
VCC = 30 V
IC/IB = 10
Cobo QT
QA
25°C 100°C
TRANSIENT CHARACTERISTICS
3.01.00.50.30.2
0.3
0.2
30
Ccb
Figure 5. Turn−On Time
IC, COLLECTOR CURRENT (mA)
20
30
50
5.0
10
7.0
Figure 6. Rise and Fall Times
IC, COLLECTOR CURRENT (mA)
t, TIME (ns)
t, TIME (ns)
70
100
10 20 50 70 100 200 300 50030
IC/IB = 10
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VEB = 2.0 V
td @ VEB = 0 20
30
50
5.0
10
7.0
70
100
10 20 50 70 100 200 300 50030
VCC = 30 V
IC/IB = 10
tr
tf
2N4401
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4
Figure 7. Storage Time
IC, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
10
5.0
7.0
ts, STORAGE TIME (ns)′
tf, FALL TIME (ns)
10 20 50 70 100 200 300 50030
100
200
30
70
50
300
10 20 50 70 100 200 300 50030
ts′ = ts - 1/8 tf
IB1 = IB2
IC/IB = 10 to 20
VCC = 30 V
IB1 = IB2
IC/IB = 20
IC/IB = 10
6.0
8.0
10
0
4.0
2.0
0.1 2.0 5.0 10 20 501.00.50.20.01 0.02 0.05 100
Figure 9. Frequency Effects
f, FREQUENCY (kHz)
SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz
NF, NOISE FIGURE (dB)
IC = 1.0 mA, RS = 150 W
IC = 500 mA, RS = 200 W
IC = 100 mA, RS = 2.0 kW
IC = 50 mA, RS = 4.0 kW
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
100k50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k
6.0
8.0
10
0
4.0
2.0
NF, NOISE FIGURE (dB)
Figure 10. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
f = 1.0 kHz
IC = 50 mA
IC = 100 mA
IC = 500 mA
IC = 1.0 mA
2N4401
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5
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between
hfe and other “h” parameters for this series of transistors. To
obtain these curves, a high−gain and a low−gain unit were
selected from the 2N4401 lines, and the same units were
used to develop the correspondingly numbered curves on
each graph.
Figure 11. Current Gain
IC, COLLECTOR CURRENT (mA)
0.1 0.2 0.5 0.7 1.0 2.0 3.0 100.3
100
200
20
70
50
300
hfe, CURRENT GAIN
hie, INPUT IMPEDANCE (OHMS)
Figure 12. Input Impedance
IC, COLLECTOR CURRENT (mA)
50k
500
30
5.0 7.0
20k
10k
5.0k
2.0k
1.0k
0.1 0.2 0.5 0.7 1.0 2.0 3.0 100.3 5.0 7.0
Figure 13. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3
0.2
10
Figure 14. Output Admittance
IC, COLLECTOR CURRENT (mA)
100
1.0
5.0 7.0
50
20
10
5.0
2.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
h , OUTPUT ADMITTANCE ( mhos)
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
m
-4
2N4401 UNIT 1
2N4401 UNIT 2
2N4401 UNIT 1
2N4401 UNIT 2
2N4401 UNIT 1
2N4401 UNIT 2
2N4401 UNIT 1
2N4401 UNIT 2
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3 5.0 7.0
2N4401
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6
STATIC CHARACTERISTICS
Figure 15. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 16. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 500.2 0.3
01.00.7 5.0 7.0
CE
IC = 1.0 mA
TJ = 25°C
0.070.050.030.020.01
10 mA 100 mA
10 20 30
500 mA
0.3
0.5
0.7
1.0
3.0
0.1
h , NORMALIZED CURRENT GAIN
0.5 2.0 3.0 10 50 700.2 0.3
0.2
1001.00.7 50030205.0 7.0
FE
TJ = 125°C
-55°C
2.0
200 300
25°C
VCE = 1.0 V
VCE = 10 V
Figure 17. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 18. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50
0
100
-0.5
0
+0.5
-1.0
-1.5
-2.0
500
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 10 V
qVC for VCE(sat)
qVB for VBE
200
0.1 0.2 0.5
COEFFICIENT (mV/ C)°
-2.5 1.0 2.0 5.0 10 20 50 100 500200
0.1 0.2 0.5
2N4401
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7
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION:
MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN
P AND BEYOND DIMENSION K MINIMUM.
RA
P
J
B
K
G
SECTION X−X
C
V
D
N
XX
SEATING
PLANE DIM MIN MAX
MILLIMETERS
A4.45 5.20
B4.32 5.33
C3.18 4.19
D0.40 0.54
G2.40 2.80
J0.39 0.50
K12.70 ---
N2.04 2.66
P1.50 4.00
R2.93 ---
V3.43 ---
1
T
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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2N4401/D
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