Details, datasheet, quote on part number: 29F200
| Part | 29F200 |
| Category | |
| Description | 2m-bit [256kx8/128kx16] CMOS Flash Memory |
| Company | Macronix |
| Datasheet | Download 29F200 Datasheet |
| Quote |
| Features, Applications |
| FEATURES 5.0V�10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90ns Compatible with MX29F200T/B device Low power consumption - 40mA maximum active - 1uA typical standby current Command register architecture - Byte/Word Programming (9us/11us typical) - Sector Erase 8K-Bytex2, 32K-Bytex1, and 64K-Byte x3) Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors or the whole chip with Erase Suspend capability. - Automatically program and verify data at specified address Status Reply - Data# Polling & Toggle bit for detection of program and erase cycle completion. Ready/Busy# pin(RY/BY#) - Provides a hardware method or detecting program or erase cycle completion Compatibility with JEDEC standard - Pinout and software compatible with single-power supply Flash - Superior inadvertent write protection Sector protection - Hardware method to disable any combination of sectors from program or erase operations - Temporary sector unprotect allows code changes in previously locked sectors Sector protect/chip unprotect for 5V only system 100,000 minimum erase/program cycles Latch-up protected to 100mA from to VCC+1V Boot Code Sector Architecture T = Top Boot Sector B = Bottom Boot Sector Low VCC write inhibit is equal to or less than 3.2V Erase suspend/ Erase Resume - Suspends an erase operation to read data from, or program data to a sector that is not being erased, then resume the erase operation. Hardware reset pin - Resets internal state mechine to the read mode 20 years data retention Package type: - 44-pin SOP - 48-pin TSOP - All Pb-free devices are RoHS Compliant The MX29F200C T/B a 2-mega bit, single 5 Volt Flash memory organized as 1M word 2M bytex8 MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F200C T/B is packaged in 44-pin SOP and 48pin TSOP. It is designed to be reprogrammed and erased in-system or in-standard EPROM programmers. The standard MX29F200C T/B offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29F200C T/B has separate chip enable (CE#) and output enable (OE# ) controls. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29F200C T/B uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility. MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29F200C T/B uses � 10% VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses to 100 milliamps on address and data pin from -1V to VCC + 1V. SYMBOL Q0-Q14 Q15/A-1 CE# OE# RESET# WE# RY/BY# BYTE# VCC GND NC PIN NAME Address Input Data Input/Output Q15(Word mode)/LSB addr.(Byte mode) Chip Enable Input Output Enable Input Hardware Reset Pin, Active low Write Enable Input Read/Busy Output Word/Byte Selection Input Power Supply Pin (+5V) Ground Pin Not Connected Internally MX29F200CT Top Boot Sector Addresses Tables Sector Size (Kbytes/ A13 A12 Kwords) (x8)Address Range 3C000h-3FFFFh (x16) Address Range 1D000h-1DFFFh 1E000h-1FFFFh Address Range (in hexadecimal) MX29F200CB Bottom Boot Sector Addresses Tables Sector Size (Kbytes/ A13 A12 Kwords)Address Range (in hexadecimal) (x8)Address Range 30000h-3FFFFh (x16) Address Range 10000h-17FFFh 18000h-1FFFFh |
| Related products with the same datasheet |
| 29F200C-55 |
| 29F200C-70 |
| 29F200C-90 |
| Some Part number from the same manufacture Macronix |
| 29F200C-55 2m-bit [256kx8/128kx16] CMOS Flash Memory |
| MX29VL033MBMC-10G 128m-bit Single Voltage 3V ONLY Uniform Sector Flash Memory |
| 27C210 2m-bit [256kx8/128x16] CMOS Eprom |
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