IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 10N100U1
IXGH 10N100AU1
TO-247 AD Outline
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
I
C
= I
C90
; V
CE
= 10 V, 4 8 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
C
ies
750 pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz 200 pF
C
res
30 pF
Q
g
52 70 nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
13 25 nC
Q
gc
24 45 nC
t
d(on)
100 ns
t
ri
200 ns
t
d(off)
550 900 ns
t
fi
10N100U1 800 ns
10N100AU1 500 ns
E
off
10N100AU1 2 3 mJ
t
d(on)
100 ns
t
ri
200 ns
E
on
1.1 mJ
t
d(off)
600 1000 ns
t
fi
10N100U1 1250 2000 ns
10N100AU1 600 1000 ns
E
off
10N100U1 5.0 mJ
10N100AU1 2.5 mJ
R
thJC
1.2 K/W
R
thCK
0.25 K/W
Reverse Diode (FRED) Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
F
= I
C90
, V
GE
= 0 V, 2.75 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
RM
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 100 A/µs 6.5 A
t
rr
V
R
= 540 V T
J
=125°C 120 ns
I
F
= 1 A; -di/dt = 50 A/µs; V
R
= 30 V T
J
=25°C50 60ns
R
thJC
1.6 K/W
Inductive load, T
J
= 125
°°
°°
°C
I
C
= I
C90
, V
GE
= 15 V, L = 300 µH
V
CE
= 0.8 V
CES
, R
G
= R
off
= 150 Ω
Remarks: Switching times
may increase
for V
CE
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 25
°°
°°
°C
I
C
= I
C90
, V
GE
= 15 V, L = 300 µH,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 150 Ω
Remarks: Switching times
may increase
for V
CE
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector