Details, datasheet, quote on part number: 10N100U1
| Part | 10N100U1 |
| Category | Discrete => IGBTs (Insulated Gate Bipolar Transistors) |
| Title | Medium Voltage 600-1199 Volts |
| Description | Low Vce(sat) High Speed Igbt With Diode |
| Company | IXYS Corporation |
| Datasheet | Download 10N100U1 Datasheet |
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| Features, Applications |
| VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 1000 V Test Conditions to 150 �C; RGE 1 M Continuous Transient 1 ms VGE 15 V, TVJ = 150 Clamped inductive load, = 25�C FeaturesMaximum lead temperature for soldering mm (0.062 in.) from case for 10 s International standard package JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOS TM process Low VCE(sat) - for low on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications Symbol Test Conditions Characteristic Values (TJ = 25�C, unless otherwise specified) min. typ. max. nA V AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Space savings (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost Symbol Test Conditions Characteristic Values (TJ = 25�C, unless otherwise specified) min. typ. max. 8 750 VCE 25 V, VGE = 1 MHz = IC90, VGE 15 V, VCE = 0.5 VCES Inductive load, = IC90, VGE � H, VCE 0.8 V CES, RG = Roff = 150 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES , higher TJ or increased RG Inductive load, = IC90, VGE � H VCE 0.8 V CES, RG = Roff = 150 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES , higher TJ or increased mJ 1.2 K/W 0.25 K/W gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK Reverse Diode (FRED) Symbol I RM trr RthJC Test ConditionsCharacteristic Values (TJ = 25�C, unless otherwise specified) min. typ. max. A ns = IC90, VGE 0 V, Pulse test, t 300 �s, duty cycle = IC90, VGE 0 V, -diF /dt = 100 A/�s 1 A; -di/dt = 50 A/�s; 25 �C IXYS reserves the right to change limits, test conditions, and dimensions.IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Fig. 4 Temperature Dependence of Output Saturation Voltage Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage |
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MEA95-06DA : Fast Recovery Epitaxial Diode (fred) Module MLO175-08IO7 : AC Controller Modules 800V ac Controller Module VUO19-12NO7 : IXTT64N25P : Polar N-channel MOSFETs International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect DESC29-06AC : Hiperfred Epitaxial Diode Isoplus220 Electrically Isolated Back Surface MCD72-18IO1B : Thyristor Modules Thyristor/diode Modules MCD40-12IO6 : Thyristor/diode Module MWI100-12T8T : Igbt Semiconductor Module; MOD IGBT TRENCH SIXPACK E3 Specifications: Configuration: Three Phase Inverter ; Input: Standard ; Voltage - Collector Emitter Breakdown (Max): 1200V ; Current - Collector (Ic) (Max): 145A ; Power - Max: 480W ; Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A ; Current - Collector Cutoff (Max): 4mA ; NTC Thermistor: Yes ; Input Capa IXTQ10P50P : Fet - Single Discrete Semiconductor Product 10A 500V 300W Through Hole; MOSFET P-CH 500V 10A TO-3P Specifications: Mounting Type: Through Hole ; FET Type: MOSFET P-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 500V ; Current - Continuous Drain (Id) @ 25� C: 10A ; Rds On (Max) @ Id, Vgs: 1 Ohm @ 500mA, 10V ; Input Capacitance (Ciss) @ Vds: 2840pF @ 25V ; Power - Max: 300W ; Packaging: Tub IXTD96N20P-7S : 150 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 150 volts ; rDS(on): 0.0300 ohms ; Package Type: 0.270 X 0.270 INCH, DIE ; Number of units in IC: 1 PDM31256SA10SO : 32K X 8 STANDARD SRAM, 10 ns, PDSO28 Specifications: Memory Category: SRAM Chip ; Density: 262 kbits ; Number of Words: 32 k ; Bits per Word: 8 bits ; Package Type: SOJ, 0.300 INCH, PLASTIC, SOJ-28 ; Pins: 28 ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Access Time: 10 ns ; Operating Temperature: 0 to 70 C (32 to 158 F) PDM31564SA20TI : 256K X 16 STANDARD SRAM, 10 ns, PDSO44 Specifications: Memory Category: SRAM Chip ; Density: 4194 kbits ; Number of Words: 256 k ; Bits per Word: 16 bits ; Package Type: SOJ, 0.400 INCH, PLASTIC, SOJ-44 ; Pins: 44 ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Access Time: 10 ns ; Operating Temperature: 0 to 70 C (32 to 158 F) |