1N6489US. : Zener Voltage Regulator Diode, Package : a

JANTXV1N3890 : Fast Rectifier (100-500ns), Package : DO-4

MLL4741A-1 : Zener Voltage Regulator Diode, Package : DO-213AB

UMAF18A : Transient Voltage Suppressor, Package : (none)

JAN1N3044D : 1 WATT Metal CASE Zener Diodes

JAN1N4581TR-1 : 6.4 Volt Temperature Compensated Zener Reference Diodes

JAN1N4582A-1-2 : 6.4 Volt Temperature Compensated Zener Reference Diodes

JAN1N4132DUR : Glass Surface Mount 0.5 WATT Zeners

APTM50DSK10T3G : Dual Common Source Mosfet Power Module

RH4571TR-2 : 6.4 Volt Temperature Compensated Zener Reference Diodes

1N2820RB : 50 Watt Zener Diodes

2SB1502 : Silicon PNP Epitaxial Planar Type Darlington. Optimum for 55W HiFi output High foward current transfer ratio hFE: to 30000 Low collector to emitter saturation voltage VCE(sat): < 2.5V Parameter Symbol VCBO VCEO VEBO ICP PC Tj Tstg Ratings to +150 Unit Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25�C.

2SK1808 : Power Switching MOSFET. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.

2SK2987 : VDDS = 60 ;; Id = 70 ;; Package Type = TO-3P(N).

BC817 : Epitaxial. NPN Epitaxial Silicon Transistor. Suitable for AF-Driver stages and low power output stages Complement to BC807/BC808 Absolute Maximum Ratings Ta=25�C unless otherwise noted Symbol VCES Parameter Collector Emitter Voltage : BC818 VCEO Collector Emitter Voltage : BC818 VEBO PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage.

ERC01-02 : . Applications Item Repetitive peak reverse voltage Average forward current Surge current Operating junction temperature Storage temperature Symbol VRRM IF(AV) IFSM Tj Tstg Resistive load Ta=60�C Sine wave 10ms Conditions -02 Rating -06 -10 Unit A �C Item Forward voltage drop Reverse current Symbol VFM IRRM Conditions IFM=4.0A Tj=25�C VR=VRRM Max. 1.1 10 Unit.

OM9375SF : 200V Hi-rel Three-phase Brushless DC Motor Controller in a F-43 Package.

STPS60L15C : Power Schottky Diodes->10, 15, 20 and 25V Power Sc. Low Drop Or-ing Power Schottky Diode.

03028BR391BKZL : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BR, 0.00039 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 3.90E-4 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 100 volts ; Mounting Style: Surface Mount Technology.

05002-5R1ADZB : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.0000051 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 5.10E-6 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

CLL5001 : 0.4 A, 175 V, SILICON, SIGNAL DIODE. s: Package: SOD-80, SOD-80, 2 PIN ; Number of Diodes: 1 ; IF: 400 mA.

GB75DA120UP : 131 A, 1200 V, N-CHANNEL IGBT. s: Polarity: N-Channel ; Package Type: ROHS COMPLIANT PACKAGE-4 ; Number of units in IC: 1.

3634A100N : 1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: ONE SURFACE ; Molded / Shielded: Shielded ; Application: General Purpose, Power Choke ; Inductance Range: 10 microH ; Operating Temperature: -40 to 105 C (-40 to 221 F).

50972R : DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F).