2SA778A

Silicon PNP Transistor

2SA778(K), 2SA778A(K) Silicon PNP Epitaxial Application High voltage medium speed switching Outline TO-92 (1) 1. Emit...

Hitachi Semiconductor

Octopart Stock #: O-70273

Findchips Stock #: 70273-F

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Description

2SA778(K), 2SA778A(K)
Silicon PNP Epitaxial
Application
High voltage medium speed switching
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
2SA778(K), 2SA778A(K)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction 
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temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SA778(K) –150 –150 –5 –50 200 150 –55 to +150 2SA778A(K) –180 –180 –5 –50 200 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
2SA778(K) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CER I CBO Min Typ Max — — –1.0 — –1.0 — –1.0 2SA778A(K) Min Typ Max — — — –1.0 –1.0 200 –1.0 V V pF MHz ns µs µs Unit V V µA µA µA Test conditions I C = –50 µA, IE = 0 I C = –50 µA, RBE = 30 kΩ VCB = –100 V, IE = 0 VCB = –150 V, IE = 0 VEB = –5 V, IC = 0 VCE = –3 V, I E = –15 mA I C = –15 mA, I B = –1 mA I C = –15 mA, I B = –1 mA VCB = –10 V, IE = 0, f = 1 MHz VCE = –3 V, I C = –15 mA VCC = –10.3 V I C = 10 IB1 = –10 I B2 = –10 mA VCC = –10 V, I C =–17 mA IB1 = –1mA, I B2 = –12 mA
–150 — –150 — — — — — — 100 –0.3
–180 — –180 — — — — 40 — — — — — — — — — — 100 –0.3
Emitter cutoff current
I EBO
— 30 — — — — — — —
DC current transfer ratio hFE Collector to emitter saturation voltage Base to emitter saturation voltage Collector output capacitance VCE(sat) VBE(sat) Cob
–0.77 –1.0 — 50 135 1.7 — 10 — — — 1.0
–0.77 –1.0 — 50 135 1.7 — 10 — — — 1.0
Gain bandwidth product f T Turn on time Turn off time Storage time t on t off t stg
2
2SA778(K), 2SA778A(K)
Switching Time Test Circuit Switching Time Test Circuit ton, toff Test Circuit D.U.T. 6k
6k 0.002 0.002
CRT 1k P.G. tr, tf ≤ 5ns PW ≥ 5µs duty ratio = 50%
tstg Test Circuit 510 D.U.T 0.1 2.4 k 50 – –3 V 50 + + 50 –
0.002 0.002
0.1 CRT 16
P.G. tr, tf ≤ 15ns PW ≤ 5µs duty ratio ≤ 10%
50 + 6V 50 – + 50 – –10.3 V Unit R : Ω C : µF `
–10 V Unit R : Ω C : µF
Response Waveform Response Waveform 90% tstg 10% td ton 90% toff
0 Input –13 V 0 Output
10% +7 V Input 0 0 Output
10% 90%
10% 10% tstg
3
2SA778(K), 2SA778A(K)
Typical Output Characteristics (1) Maximum Collector Dissipation Curve Collector power dissipation Pc (mW) 300 Collector Current IC (mA) –40 –50 –0.9 –0.8 –0.7
–1 .0
P
C
=
–0.6 –0.5
20
0
m
W
–0.4
–30
200
–0.3 –0.2 –0.15 –0.1
–20
100
–10
–0.05 mA IB = 0
0
50 100 150 Ambient Temperature Ta (°C)
0
–1 –2 –3 –4 –5 Collector to Emitter Voltage VCE (V)
Typical Output Characteristics (2) –0.5 Collector Current ICBO (nA) Collector Current IC (mA) –300
Collector Cutoff Current vs. Collector to Base Voltage
125
–0.4
–4
–100
100
–0.3
–3
–30
75
–10 –3 –1.0 –0.3
50
–0.2
–2
–0.1
–1 µA
IB = 0
Ta =
25°C
0
–40 –80 

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