MCM Package s Overall Configuration s +5V Operation (Standard) or +3.3V (Consult Factory) s Access Times 80, 100 and ( 5V VCC) or +12V Programing s Erase/Program Cycles q 100,000 Commercial q 10,000 Military and Industrial s Sector Architecture (Each Die) q One 16K Protected Boot Block (Bottom Boot Block Standard, Top Boot Block Special Order) q Two 8K Parameter Blocks q One 96K Main Block q Seven 128K Main Blocks

Single Block Erase (All bits set to 1) Hardware Data Protection Feature Independent Boot Block Locking MIL-PRF-38534 Compliant MCMs Available Packaging � Hermetic Ceramic x.94" x.180" Dual-Cavity Small Outline Gull Wing, Aeroflex code# "F14" (Drops into the 68 Lead JEDEC.99"SQ CQFJ footprint) s Internal Decoupling Capacitors for Low Noise Operation s Commercial, Industrial and Military Temperature Ranges

Pin Description WP RP VCC Data I/O Address Inputs Write Enables Chip Enables Output Enable Write Protect Reset/Powerdown Power Supply Ground Not Connected

Utilizing Intel's SmartVoltage Boot Block Flash Memory SmartDieTM, the is a high speed, 32 megabit CMOS flash multichip module (MCM) designed for full temperature range military, space, or high reliability applications. The ACT-F1M32 consists of four high-performance Intel X28F800BV 8 Mbit (8,388,608 bit) memory die. Each die contains separately erasable blocks, including a hardware lockable boot block (16,384 bytes), two parameter blocks (8,192 bytes each), and 8 main blocks (one block of 98,304 bytes and seven blocks of 131,072 bytes) This defines the boot block flash family architecture. The command register is written by bringing to a logic low level (VIL), while CE is low and OE is high (VIH). Reading is

Optional Configuration � A19 Pin Description 1Mx8 RP VCC 8 I/O24-31 GND NC Data I/O Address Inputs Write Enable Chip Enables Output Enable Reset/Powerdown Power Supply Ground Not Connected

accomplished by chip Enable (CE) and Output Enable (OE) being logically active. Access time grades 80nS, 100nS and 120nS maximum are standard. The ACT�F1M32 is packaged in a hermetically sealed co-fired ceramic lead,.94" SQ Ceramic Gull Wing CQFP package. This allows operation in a military environment temperature range to +125�C. The ACT�F1M32 provides program and erase capability or 12V and allows reads with Vcc or 3.3V(Not tested). Since many designs read from flash memory a large percentage of the time, read operation using 3.3V can provide great power savings. Consult the factory for 3.3V tested parts. In applications where read performance is critical, faster access times are obtainable with the 5V VCC part detailed herein. For program and erase operations, 5V Vpp operation eliminates the need for in system voltage converters. The 12V Vpp operation provides reduced (approx 60%) program and erase times where 12V is available in the system. For design simplicity, however, connect Vcc and Vpp to the same 5V �10% source. Each block can be independently erased and programmed 100,000 times at commercial temperature or 10,000 times at extended temperature. The boot block is located at either the bottom (Standard) or the top (Special Order) of the address map in order to accommodate different microprocessor protocols for boot code location. Locking and unlocking of the boot block is controlled by WP and/or RP. Intel's boot block architecture provides a flexible solution for the different design needs of various applications. The asymmetrically-blocked memory map allows the integration of several memory components into a single flash device. The boot block provides a secure boot PROM; the parameter blocks can emulate EEPROM functionality for parameter store with proper software techniques; and the main blocks provide code and data storage with access times fast enough to execute code in place, decreasing RAM requirements. For Detail Information regarding the operation of the 28F800BV Memory die, see the Intel datasheet (order number 290539-002).

Parameter Case Operating Temperature Range Storage Temperature Range Voltage on Any Pin with Respect to GND (except VCC, VPP, A9 and RP) (1) Voltage on Pins or RP with Respect to GND (except VCC, VPP, A9 and RP)

VPP Program Voltage with Respect to GND during Block Erase/ and Word/Byte Write (1,2) Vcc Supply Voltage with Respect to Ground Output Short Circuit Current (3)

Notes: 1. Minimum DC voltage -0.5V on input/output pins. During Transitions, inputs may undershoot to -2.0V for periods < 20nS. Maximum DC voltage on input/output pins is Vcc + 0.5V, which may overshoot to Vcc + 2.0V for periods 20nS. 2. Maximum DC voltage on Vpp may overshoot to +14.0V for periods < 20nS. Maximum DC voltage or A9 may overshoot to VCC + 0.5V for periods <20nS 3. Output shorted for no more than 1 second. No more than one output shorted at one time. NOTICE: Stresses above those listed under "Absolute Maximums Rating" may cause permanent damage. These are stress rating only. Operation beyond the "Operation Conditions" is not recommended and extended exposure beyond the "Operation Conditions" may effect device reliability.

Symbol VCC Parameter 5V Power Supply Voltage (10%) 3.3V Power Supply Voltage (�0.3V) (Consult Factory) VIH IL TA Input High Voltage & 5V VCC) Input Low Voltage & 5V VCC) Operating Temperature (Military) Minimum Maximum +5.5 +3.6 Vcc Units �C

Parameter � A19 Capacitance OE Capacitance CE Capacitance RP Capacitance WE Capacitance WP Capacitance � I/O31 Capacitance

+3.3V VCC (1) Parameter Input Load Current Output Leakage Current Vcc Standby Current Vcc Deep Power-Down Current Vcc Read Current Vcc Write Current Sym IIL ILO ICCS ICCD ICCR ICCW1 ICCW2 Vcc Erase Current ICCE1 ICCE2 Vcc Erase Suspend Current VPP Standby Current

Conditions VCC = VCCMax., VIN = VCC or GND VCC = VCCMax., VIN = VCC or GND VCC = VCCMax., WP = VCC � 0.2V VCC = VCCMax., VIN = VCC or GND, RP = GND � 0.2V VCC = VCCMax., CE = GND, 5MHz (3.3V), IOUT = 0 mA, Inputs = GND 0.2V or VCC � 0.2V VPP = VPPH 1 (at 5V), Word Write in Progress (x32) VPP = VPPH 2 (at 12V), Word Write in Progress (x32) VPP = VPPH 1 (at 5V),Block Erase in Progress VPP = VPPH 2 (at 12V),Block Erase in Progress CE = VIH, Block Erase Suspend VPP < VPPH 2 3