Details, datasheet, quote on part number: GS74116ATP-8I
| Part | GS74116ATP-8I |
| Category | Memory => SRAM => Async. SRAM |
| Description | |
| Company | GSI Technology |
| Datasheet | Download GS74116ATP-8I Datasheet |
| Ask AI | |
| Quote |
| Features, Applications |
| GS74116ATP/J/X SOJ, TSOP, FP-BGA Commercial Temp Industrial Temp Features Fast access time: ns CMOS low power operation: mA at minimum cycle time Single 3.3 V power supply All inputs and outputs are TTL-compatible Byte control Fully static operation Industrial Temperature Option: to 85�C Package line J: 400 mil, 44-pin SOJ package TP: 400 mil, 44-pin TSOP Type II package 10 mm Fine Pitch Ball Grid Array package DescriptionThe is a high speed CMOS Static RAM organized as 262,144 words by 16 bits. Static design eliminates the need for external clocks or timing strobes. The GS operates on a single 3.3 V power supply and all inputs and outputs are TTLcompatible. The GS74116A is available 10 mm Fine Pitch BGA package, 400 mil SOJ and 400 mil TSOP Type-II packages. Address input Data input/output Chip enable input Lower byte enable input to DQ8) Upper byte enable input to DQ16) Write enable input Output enable input +3.3 V power supply Ground No connect 10 mm Bump Pitch Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Not Selected Read High Z Write Not Write, High Z High Z High ZNot Selected Read High Z Read Write Not Write, High Z Write High Z High Z Supply Voltage Input Voltage Output Voltage Allowable power dissipation Storage temperature Note: Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. |
| Related products with the same datasheet |
| GS74116AJ-10 |
| GS74116AJ-10I |
| GS74116AJ-12 |
| GS74116AJ-12I |
| GS74116AJ-7 |
| GS74116AJ-7I |
| GS74116AJ-8 |
| GS74116AJ-8I |
| GS74116ATP-10 |
| GS74116ATP-10I |
| GS74116ATP-12 |
| GS74116ATP-12I |
| Some Part number from the same manufacture GSI Technology |
| GS74116ATP-8T |
| GS74116J |
| GS74117A |
| GS76024 |
| GS76024A |
| GS76024B |
| GS78108 |
| GS78108A |
| GS78108B |
| GS78116 |
| GS78116A |
| GS78116B |
| GS78132 |
| GS78132A |
|
840FH32A : Burst SRAM Synchronous Burst SRAMs, 4Meg, 256K X 18,3.3 V GS816032T-166I : Sychronous Burst GS832032T-150V : 36Mb Pipelined and Flow Through Synchronous NBT Srams GS864018T-250I : 72Mb Pipelined and Flow Through Synchronous NBT SRAM GS8640Z18T-200IV : 72Mb Pipelined and Flow Through Synchronous NBT SRAM GS81302Q08E-300I : STANDARD SRAM Specifications: Memory Category: SRAM Chip GS8321ZV32GE-133IT : 1M X 32 ZBT SRAM, 6.5 ns, PBGA165 Specifications: Memory Category: SRAM Chip ; Density: 33554 kbits ; Number of Words: 1000 k ; Bits per Word: 32 bits ; Package Type: 15 X 17 MM, 1 MM PITCH, FPBGA-165 ; Pins: 165 ; Logic Family: CMOS ; Supply Voltage: 2.5V ; Access Time: 6.5 ns ; Operating Temperature: 0 to 70 C (32 to 158 F) GS8322ZV72GC-166I : 512K X 72 ZBT SRAM, 6.5 ns, PBGA209 Specifications: Memory Category: SRAM Chip ; Density: 37749 kbits ; Number of Words: 512 k ; Bits per Word: 72 bits ; Package Type: BGA, 14 X 22 MM, 1 MM PITCH, ROHS COMPLIANT, BGA-209 ; Pins: 209 ; Logic Family: CMOS ; Supply Voltage: 2.5V ; Access Time: 6.5 ns ; Operating Temperature: 0 to 70 C (3 GS8342TT10BD-333 : 1M X 36 STANDARD SRAM, 0.45 ns, PBGA165 Specifications: Memory Category: SRAM Chip ; Density: 37749 kbits ; Number of Words: 1000 k ; Bits per Word: 36 bits ; Package Type: 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 ; Pins: 165 ; Supply Voltage: 1.8V ; Access Time: 0.4500 ns ; Operating Temperature: -40 to 85 C (-40 to 185 F) GS8662DT19BD-300IT : 8M X 8 QDR SRAM, 0.45 ns, PBGA165 Specifications: Memory Category: SRAM Chip ; Density: 67109 kbits ; Number of Words: 8000 k ; Bits per Word: 8 bits ; Package Type: 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 ; Pins: 165 ; Supply Voltage: 1.8V ; Access Time: 0.4500 ns ; Operating Temperature: 0 to 70 C (32 to 158 F) GS8662T06BD-350IT : 8M X 8 DDR SRAM, 0.45 ns, PBGA165 Specifications: Memory Category: SRAM Chip ; Density: 67109 kbits ; Number of Words: 8000 k ; Bits per Word: 8 bits ; Package Type: 13 X 15 MM, 1 MM PITCH, FPBGA-165 ; Pins: 165 ; Supply Voltage: 1.8V ; Access Time: 0.4500 ns ; Operating Temperature: 0 to 70 C (32 to 158 F) GS881E18GT-11T : 512K X 18 CACHE SRAM, 7.5 ns, PBGA165 Specifications: Memory Category: SRAM Chip ; Density: 9437 kbits ; Number of Words: 512 k ; Bits per Word: 18 bits ; Package Type: 13 X 15 MM, 1 MM PITCH, FPBGA-165 ; Pins: 165 ; Supply Voltage: 2.5V ; Access Time: 7.5 ns ; Operating Temperature: 0 to 70 C (32 to 158 F) |