Intersil`s Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability. The Intersil is a Radiation Hardened High Reliability, High-Speed CMOS/SOS Octal Buffer/Line Driver with three-state outputs having two active low enable inputs. Each enable input controls a set of four inverting buffer/line drivers. A HIGH on the enable input places the outputs in a high impedance state.

QML Class T, Per MIL-PRF-38535 Radiation Performance - Gamma Dose x 105 RAD(Si) - Latch-Up Free Under Any Conditions - Single Event Upset (SEU) Immunity: x 10-10 Errors/Bit/Day (Typ) - SEU LET MEV-cm2/mg 1.25 Micron Radiation Hardened SOS CMOS Significant Power Reduction Compared to ALSTTL Logic DC Operating Voltage Range. to 5.5V Input Logic Levels - VIL = 0.8V Max - VIH = VCC/2 Min Fast Propagation Delay. 17.5ns (Max), 12ns (Typ)

Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the ACTS240T are contained in SMD 5962-96717. A "hot-link" is provided from our website for downloading. www.intersil.com/spacedefense/newsafclasst.asp Intersil`s Quality Management Plan (QM Plan), listing all Class T screening operations, is also available on our website. www.intersil.com/quality/manuals.asp

ORDERING NUMBER 5962R9671701TRC 5962R9671701TXC PART NUMBER ACTS240DTR ACTS240KTR TEMP. RANGE (oC) to 125

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. www.intersil.com 407-727-9207 | Copyright � Intersil Corporation 1999

DIE DIMENSIONS: 21mils �2mil METALLIZATION: Type: Si Cu Thickness: 10.0k� �2k� SUBSTRATE POTENTIAL: Unbiased (Silicon on Sapphire) Bond Pad #20 (VCC) First Bond Pad #10 (Gnd) Uses Two Bond Wires Bond Pad #20 (VCC) Uses Two Bond Wires BACKSIDE FINISH: Sapphire PASSIVATION: Type: Silox (SiO2) Thickness: 8.0k� �1.0k� WORST CASE CURRENT DENSITY: 2.0e5 A/cm2 TRANSISTOR COUNT: 164 PROCESS: CMOS SOS

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com