22RIA20 : 200V 22A Phase Control SCR in a TO-208AA (TO-48) Package

ILR540 : HexFET(r) Power MOSFET: 100v, 28a

SD103R16S20PSV : Fast Recovery Diode

IRKTF112-08HL : FAST Thyristor/ Diode and Thyristor/ Thyristor

SD400R12PC : Standard Recovery Diodes Stud Version

MBR40L15CW_06 : Schottky Rectifier

94MT : Three Phase AC Switch

JANS22GQ100 : 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-254AA Specifications: Rectifier Configuration / Technology: Schottky ; Number of Diodes: 1 ; VRRM: 100 volts ; IF: 30000 mA

SWT65-522A : 3-OUTPUT 66 W AC-DC REG PWR SUPPLY MODULE Specifications: Output Voltage: 5 volts ; Input Voltage: 170 to 265 volts ; Output Power: 66 watts (0.0885 HP) ; Operating Temperature: -10 to 60 C (14 to 140 F)

BSS223PW : OptiMOS®. Feature P-Channel Enhancement mode Super Logic Level (2.5 V rated) 150�C operating temperature Avalanche rated dv/dt rated Maximum Ratings, = 25 �C, unless otherwise specified Parameter Continuous drain current Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Thermal resistance, junction.

BUL57A : Screening Options Available = ;; Polarity = NPN ;; Package = TO220 ;; Vceo = 70V ;; IC(cont) = 22A ;; HFE(min) = 10 ;; HFE(max) = - ;; @ Vce/ic = 4V / 20A ;; FT = 20MHz ;; PD = 80W.

CPV364MF : Igbt Sip Module. Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for medium operating frequency to 10kHz) See Fig. 1 for Current vs. Frequency curve Output Current in a Typical 5.0 kHz Motor Drive 12 ARMS per phase (3.8 kW total) with = 125�C, Supply Voltage 360Vdc, Power.

FMX-G12S : . (=I F) 90% Recovery Point (ex. =100mA/100mA 90% Recovery Point) F) 75% Recovery Point (ex. =100mA/200mA 75% Recovery Point) (Common to backside of case) 1 Chip N.C Cathode (Common) Anode .

STGF7NB60SL : N-channel 7A - 600V - TO-220FP Powermesh Igbt. POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve.

SI2303 : PIN Diode BAS23W SOT-23 P-Channel MOSFET. RDS(ON)=180m�@VGS= -4.5V High dense cell design for extremely low RDS(ON) Rugged and reliable Lead free product is acquired SOT-23 Package Marking Code: S3 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed a Gate-source Voltage Total.

RJL5013DPP : Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching.

000-7238-37R : DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: 0 to 70 C (32 to 158 F).

BDX53CJ69Z : 8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220. s: Polarity: NPN ; Package Type: TO-220, TO-220, 3 PIN.

GBL208L : 2 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE. s: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 60000 mA ; VBR: 800 volts ; RoHS Compliant: RoHS ; Package: PLASTIC, GBL, 4 PIN ; Pin Count: 4 ; Number of Diodes: 4.

PP78R1UF+/-1%160V : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 160 V, 1 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; Capacitance Range: 1 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 160 volts ; Mounting Style: Through Hole ; Operating.

RER40 : RESISTOR, WIRE WOUND, 5 W, 1 %, 20; 50 ppm, 1 ohm - 1650 ohm, CHASSIS MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: Bolt-on Chassis, Axial Leads, AXIAL LEADED ; Operating Temperature: -55 to 250 C (-67 to 482 F).

VC3D120 : RESISTOR, WIRE WOUND, 3 W, 5 %, 150 ppm, 120 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Resistance Range: 120 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 150 ±ppm/°C ; Power Rating: 3 watts (0.0040 HP) ; Standards and Certifications:.

2N6989J : 0.8 A, 50 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR. s: Polarity: NPN ; Package Type: HERMETIC SEALED, CERAMIC, DIP-14.

4RE0R10MCA : CAP,AL2O3,100NF,4VDC,20% -TOL,20% +TOL. s: Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic.

7446422007 : 1 ELEMENT, 6800 uH, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: Radial, WIRE ; Standards and Certifications: RoHS ; Application: General Purpose ; Inductance Range: 6800 microH ; Rated DC Current: 2500 milliamps ; Operating Temperature: -25 to 125 C (-13 to 257 F).