GS8162Z36DGD-200I by Gsi Technology SRAMs | Avnet

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GS8162Z36DGD-200I

SRAM Chip Sync Quad 2.5V/3.3V 18M-Bit 512K x 36 6.5ns/3ns 165-Pin FBGA

GS8162Z36DGD-200I in SRAMs by Gsi Technology
Gsi Technology
Manufacturer: Gsi Technology
Product Category: Memory, SRAMs
Avnet Manufacturer Part #: GS8162Z36DGD-200I
RoHS 10 Compliant
Bulk

The GS8162Z36DD is an 18Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NoBL or other pipelined read/double late write or flow through read/ single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles.Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power rail for proper operation. Asynchronous inputs include the Sleep mode enable (ZZ) and Output Enable. Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's out put drivers off at any time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off- chip write pulse generation required by asynchronous SRAMs and simplifies input signal timing.The GS8162Z36DD may be configured by the user to operate in Pipeline or Flow Through mode. Operating as a pipelined synchronous device, in addition to the rising-edge-triggered registers that capture input signals, the device incorporates a rising edge triggered output register. For read cycles, pipelined SRAM output data is temporarily stored by the edge-triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock.The GS8162Z36DD is implemented with GSI's high performance CMOS technology and is available in a JEDEC- standard 119-bump or 165-bump BGA package.

Key Features

  • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with both pipelined and flow through ™, NoBL™ and ZBT™ SRAMs
  • 1.8 V or 2.5 V core power supply
  • 1.8 V or 2.5 V I/O supply
  • User-configurable Pipeline and Flow Through mode
  • ZQ mode pin for user-selectable high/low output drive
  • IEEE 1149.1 JTAG-compatible Boundary Scan
  • LBO pin for Linear or Interleave Burst mode
  • Pin-compatible with 2Mb, 4Mb, 8Mb, 36Mb, 72Mb and 144Mb devices
  • Byte write operation (9-bit Bytes)
  • 3 chip enable signals for easy depth expansion
  • ZZ Pin for automatic power-down
  • JEDEC-standard 119- and 165-Bump BGA package
  • RoHS-compliant packages available
  • 1MB product Family
  • 13 mm x 15 mm, 165 FPBGA
  • Default to SCD x36 Interleaved Pipeline mode

Technical Attributes

Find Similar Parts
Description Value
Memory Density 18
No. of Pins 165
Operating Temperature Min -40
Supply Voltage Nom 2.5
SRAM Type SDR
Clock Frequency Max 153.8@Flow-Through|2
IC Mounting Surface Mount
IC Case / Package FBGA
Supply Voltage Min 2.3
Operating Temperature Max 100
Supply Voltage Max 2.7

ECCN / UNSPSC / COO

Description Value
ECCN: 3A991.B.2.B
SCHEDULE B: 8542320040
HTSN: 8542320041
Country Of Origin: Taiwan
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