Details, datasheet, quote on part number: OP215GP
| Part | OP215GP |
| Category | |
| Description | Dual Precision Jfet-input Operational Amplifier |
| Company | Analog Devices |
| Datasheet | Download OP215GP Datasheet |
| Cross ref. | Similar parts: LF147, LF147JAN, LF147QML, LF156JAN, LF256, LF347, LF347-N, LF347B, LF353, LF353-N |
| Quote |
| Features, Applications |
FEATURES High Slew Rate: V/ s Min Fast Settling Time: to 0.1% Type Low Input Offset Voltage Drift: V/ C Max Wide Bandwidth: 3.5 MHz Min Temperature-Compensated Input Bias Currents Guaranteed Input Bias Current: 18 nA Max (125C) Bias Current Specified Warmed Up over Temperature Low Input Noise Current: 0.01 pA/�Hz Type High Common-Mode Rejection Ratio 86 dB Min Pin Compatible with Standard Dual Pinouts Models with MIL-STD-883 Class B Processing Available The OP215 offers the proven JFET-input performance advantages of high speed and low input bias current with the tracking and convenience advantages of a dual op amp configuration. Low input offset voltages, low input currents, and low drift are featured in these high-speed amplifiers. On-chip zener-zap trimming is used to achieve low VOS, while a bias-current compensation scheme gives a low input bias current at elevated temperature. Thus, the OP215 features an input bias current at 70C ambient (not junction) temperature which greatly extends the application usefulness of this device. Applications include high-speed amplifiers for current output DACs, active filters, sample-and-hold buffers, and photocell amplifiers. For additional precision JFET op amps, see the OP249 and AD712 data sheets. NOTE R7, R8 ARE ELECTRONICALLY ADJUSTED ON-CHIP FOR MINIMUM OFFSET VOLTAGEInformation furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 � Analog Devices, Inc., 2002 Parameter Input Offset Voltage Input Offset Current1 Input Bias Current1 Input Resistance Large-Signal Voltage Gain Output Voltage Swing Supply Current Slew Rate Gain Bandwidth Product3 Conditions 50 W `G' Grade = 25C Device Operating = 25C Device Operating RL 2 kW, 2 kW `G' GradeInput Voltage Range Common-Mode Rejection Ratio Power Supply Rejection Ratio Input Noise Voltage Density Input Noise Current Density Input Capacitance NOTES 1 Input bias current is specified for two different conditions. The = 25C specification is with the junction at ambient temperature; the device operating specification is with the device operating in a warmed up condition 25 C ambient. The warmed up bias-current value is correlated to the junction temperature value via the curves of IS versus Tj and IS versus TA. PMI has a bias-current compensation circuit that gives improved bias current and bias current over temperature versus standard JFET input op amps. I S and IOS are measured 0. 2 Setting time is defined here for a unity gain inverter connection using k W resistors. It is the time required for the error voltage (the voltage at the inverting input pin on the amplifier) to settle to within a specified percent of its final value from the time 10 V step input is applied to the inverter. See setting time test circuit. 3 Sample tested. Specifications are subject to change without notice. SPECIFICATIONSParameter Input Offset Voltage Average Input Offset Voltage Drift Without External Trim1 With External Trim Input Offset Current2 Symbol VOS Conditions 50 W Input Voltage Range Common-Mode Rejection Ratio Power Supply Rejection Ratio Large-Signal Voltage Gain Output Voltage Swing NOTES 1 Sample tested. 2 Input bias current is specified for two different conditions. The = 25C specification is with the junction at ambient temperature; the Device Operating specification is with the device operating in a warmed up condition 25 C ambient. The warmed up bias-current value is correlated to the junction temperature value via the curves of IS versus Tj and IS versus TA. PMI has a bias-current compensation circuit that gives improved bias current and bias current over temperature versus standard JFET input op amps. I S and IOS are measured = 0. Specifications are subject to change without notice. |
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