RFM4N35 MOSFET. Datasheet pdf. Equivalent
Type Designator: RFM4N35
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 75 W
Maximum Drain-Source Voltage |Vds|: 350 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 42 nS
Drain-Source Capacitance (Cd): 150 pF
Maximum Drain-Source On-State Resistance (Rds): 2 Ohm
Package: TO3
RFM4N35 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RFM4N35 Datasheet (PDF)
..1. Size:42K harris semi
rfm4n35 rfm4n40 rfp4n35 rfp4n40.pdf
rfm4n35 rfm4n40 rfp4n35 rfp4n40.pdf
RFM4N35, RFM4N40, RFP4N35, RFP4N40SemiconductorData Sheet October 1998 File Number 1491.34A, 350V and 400V, 2.000 Ohm, N-Channel FeaturesPower MOSFETs 4A, 350V and 400V[ /Title[ /TitleThese are N-channel enhancement-mode silicon-gate rDS(ON) = 2.000(RFM4N()power field effect transistors designed for applications such35, Related Literature/Sub- as switchi
Datasheet: STB28N65M2 , STB28NM60ND , STB2N62K3 , STB30NF10T4 , STB30NF20L , STB30NM60N , STB31N65M5 , STB32NM50N , STF13NM60N , STB33N65M2 , STB34N65M5 , STB34NM60N , STB35NF10T4 , STB36NF06LT4 , STB36NM60ND , STB38N65M5 , STB3NK60ZT4 .
