These series of Silicon Controlled R ectifier use a high performance PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required using surface mount technology.

SYMBOL PARAMETER On-state Current* Average On-state Current* Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature CONDITIONS Half Cycle, = 180 Ttab 95 �C Half Cycle, = 180 Ttab 95 �C Half Cycle, 60 Hz, 25 �C Half Cycle, 50 Hz, = 10ms, Half Cycle IGR = 10 �A, 20 �s max. 20 �s max. 20 ms max. Min. Max. Unit A2s �C

SYMBOL PARAMETER Gate Trigger Current Off-State Leakage Current On-state Voltage On-state Threshold Voltage Dinamic Resistance Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current Critical Rate of Voltage Rise CONDITIONS MIN = 12 VDC 25 �C MAX VD = VDRM , RGK 125 �C MAX VR = VRRM 25 �C MAX = 1.6 Amp, = 380 �s, 25 �C MAX 125 �C MAX 125 �C MAX = 12 VDC 25 �C MAX VD = VDRM = 3.3K, RGK = 1K, MIN mA , RGK mA , RGK 0.67 x VDRM , RGK 125 �C MAX MIN 01 20 SENSITIVITY Unit �A mA V/�s A/�s

Critical Rate of Current Rise 2 x IGT Tr 100 ns, = 60 Hz, 125 �C Thermal Resistance Junction-Leads for DC Thermal Resistance Junction-Ambient

Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and T tab). P (W) 1.4

Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a) / Rth(j-a) 1.00