MRF464 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF464
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: M174
MRF464 Transistor Equivalent Substitute - Cross-Reference Search
MRF464 Datasheet (PDF)
mrf464.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF464/DThe RF LineNPN SiliconMRF464RF Power Transistor. . . designed primarily for applications as a highpower linear amplifier from 2.0to 30 MHz, in single sideband mobile, marine and base station equipment. Specified 28 Volt, 30 MHz Characteristics Output Power = 80 W (PEP)80 W (PEP), 30 MHzMinimum G
mrf464re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF464/DThe RF LineNPN SiliconMRF464RF Power Transistor. . . designed primarily for applications as a high power linear ampli
mrf466.pdf
ELEFLOW TECHNOLOGIES MRF466www.eleflow.com NPN Silicon RF power transistor MRF466 Description: MRF466 is designed primarily for applications as a highpower linear amplifier from 2.0 to 30 MHz, in single sideband mobile, marine and base station equipment. 2N5941 Replacement. Features: Specified 28 Volt, 30 MHz Characteristics: Output Power = 40 W (PEP) or CW, Minimum Gain =
Datasheet: 2SD542 , 2SD543 , 2SD544 , 2SD544-1 , 2SD544-2 , 2SD545 , 2SD545D , 2SD545E , D880 , 2SD545G , 2SD546 , 2SD547 , 2SD548 , 2SD549 , 2SD55 , 2SD550 , 2SD551 .
