3.0V, single power supply operation - Minimizes system level power requirements High performance - Access times as fast as 70 ns Low power consumption (typical values at 5 MHz) 9 mA typical active read current 20 mA typical program/erase current 1 �A typical standby current (standard access time to active mode) Flexible Sector Architecture: - One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte sectors (byte mode) - One 8 Kword, two 4 Kword, one 16 Kword and thirty-one 32 Kword sectors (word mode) - Supports full chip erase - Individual sector erase supported - Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors. High performance program/erase speed - Byte program time: 8�s typical - Sector erase time: 500ms typical - Chip erase time: 17.5s typical JEDEC Standard program and erase commands JEDEC standard DATA polling and toggle bits feature Single Sector and Chip Erase Sector Unprotect Mode Embedded Erase and Program Algorithms Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode 0.23 �m triple-metal double-poly triple-well CMOS Flash Technology Low Vcc write inhibit < 2.5V

The a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8�s. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast 70ns to eliminate the need for WAIT states in high-performance microprocessor systems. The EN29LV160 has separate Output Enable ( OE Chip Enable ( CE and Write Enable (WE) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector.

This Data Sheet may be revised by subsequent versions 1 or modifications due to changes in technical specifications.

This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Pin Name / A-1 CE# OE# RESET# RY/BY# WE# Vcc Vss NC BYTE# Function 20 Addresses 15 Data Inputs/Outputs DQ15 (data input/output, word mode), A-1 (LSB address input, byte mode) Chip Enable Output Enable Hardware Reset Pin Ready/Busy Output Write Enable Supply Voltage (2.7-3.6V) Ground Not Connected to anything Byte/Word Mode