100310QIX : General Purpose/ Low Skew 2:8 Differential Clock Driver

DM74LS175 : Bipolar->LS Family Quad D Flip-flop With Clear And Complementary Outputs

FQI9N15 : 150V N-channel QFET

QVE00039 : Remote Control Phototransistor Optical Interrupter Switch

FDMF6704 : The Xtra Small High Performance, High Frequency DrMOS Module The XS� DrMOS family is Fairchild�s next-generation fullyoptimized ultra-compact integrated MOSFET plus driver power stage solution for high current, high frequency synchronous buck DC-DC applications. The FDMF6704 DrMOS integrates a driv

H11A817D.300 : 4-pin Phototransistor Optocouplers

FDA2712 : N-channel Ultrafet Trench Mosfet 250v, 64A, 34m��

FPN560A_D75Z : Transistor (bjt) - Single Discrete Semiconductor Product 3A 60V 1W NPN; TRANSISTOR NPN 60V 3A TO-226 Specifications: Transistor Type: NPN ; Voltage - Collector Emitter Breakdown (Max): 60V ; Current - Collector (Ic) (Max): 3A ; Power - Max: 1W ; DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V ; Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A ; Frequency - Transition: 75MHz ; Current - Colle

FPNH10D75Z : UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 Specifications: Polarity: NPN ; Number of units in IC: 1 ; Operating Frequency: 650 MHz

FPF1320UCX : Power Switch ICs - Power Distribution Dual In Signal Out Advance Power Switch Specifications: Number of Outputs: ; Current Limit: ; On Resistance - Max: 170 mOhms ; Operating Supply Voltage: 1.5 V to 5.5 V ; Maximum Operating Temperature: + 85 C ; Mounting Style: ; Package/Case: WLCSP-6

2SD2216J : VCEO(V) = 50 ;; IC(A) = 0.1 ;; HFE(min) = 180 ;; HFE(max) = 390 ;; Package = SSMini3-F1.

2SJ400 : . Low ON resistance. Ultrahigh-speed switching. 4V drive. Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package. Any and all SANYO products described or contained herein do not have s that can handle applications that require extremely high levels of reliability, such as life-support.

BFR505T : BFR505T; NPN 9 GHZ Wideband Transistor;; Package: SOT416 (EMT3, SMPAK).

DCR1473SY : 4135a 1200v Disc Phase Control Thyristor. KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 1000V/�s 500A/�s Outline type code: Y See Package Details for further information. Fig. 1 Package outline Part Number Repetitive Peak Voltages VDRM VRRM DCR1473SY12 1200 Tvj to 125�C. IDRM = IRRM = 250mA. VDRM, VRRM 10ms 1/2 sine. VDSM & VRSM = VDRM & VRRM + 100V respectively. Conditions When ordering, select.

IRHNA57260 : 200V 100kRad Hi-rel Single N-channel Tid Hardened MOSFET in a SMD-2 Package.

STA303A : Array. Sink Driver General Purpose. Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Ratings to +150 Symbol ICBO IEBO VCEO hFE VCE(sat) ton tstg tf V min typ max 100 10 Unit With Silicone Grease Natural Cooling Heatsink: Aluminum in mm .

03028-BP151YKM-T : CAP,CERAMIC,150PF,16VDC,10% -TOL,10% +TOL,BP TC CODE,-30,30PPM TC,0603 CASE. s: Dielectric: Ceramic Composition.

05002-2R2CBZP : CAPACITOR, CERAMIC, MULTILAYER, 200 V, BP, 0.0000022 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 2.20E-6 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 200 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

B140WS-7 : 1 A, 40 V, SILICON, SIGNAL DIODE. s: Package: GREEN, PLASTIC PACKAGE-2 ; Number of Diodes: 1 ; IF: 1000 mA ; RoHS Compliant: RoHS.

C1210C104M1VC : CAPACITOR, CERAMIC, MULTILAYER, 100 V, Y5V, 0.1 uF, SURFACE MOUNT, 1210. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.1000 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 100 volts ; Mounting Style: Surface Mount Technology.

DO1605T-102MLB : 1 ELEMENT, 1 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: ONE SURFACE ; Standards and Certifications: RoHS ; Application: General Purpose, Power Choke ; Inductance Range: 1 microH ; Inductance Tolerance: 20 (+/- %) ; DCR: 0.0400.

SKIIP23NAB12T4V10 : 41 A, 1200 V, N-CHANNEL IGBT. s: Polarity: N-Channel ; Package Type: MINISKIIP 2, 42 PIN ; Number of units in IC: 7.

SMF368KJT : RESISTOR, METAL FILM, 3 W, 5 %, 100 ppm, 68000 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Technology / Construction: MetalFilm ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP, ROHS COMPLIANT ; Resistance Range: 68000 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 100 ±ppm/°C ; Power Rating: 3 watts (0.0040.

SZMMSZ4679T1G : VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE. Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD-123 package. These devices provide a convenient alternative to the leadless 34-package style. 500 mW Rating or FR-5 Board Wide Zener Reverse Voltage Range 43 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications.

2N2854LEADFREE : 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39. s: Polarity: NPN ; Package Type: TO-3, TO-39, TO-39, 3 PIN.

2SK3821-TL : 40 A, 100 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.0420 ohms ; PD: 1650 milliwatts ; Package Type: SMP-FD, 3 PIN ; Number of units in IC: 1.