CAT25C11GYE-1.8TE13 by Onsemi | EEPROM | Partstack
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CAT25C11GYE-1.8TE13

Onsemi

CAT25C11GYE-1.8TE13 by Onsemi

EEPROM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,120 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,120

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Vyrian

USA . 381 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

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10k+ parts

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381

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 161 parts In-Stock

1+ parts

$10.882

100+ parts

-

1k+ parts

-

10k+ parts

-

161

$10.882

-

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Northwest PG Solutions

USA . 438 parts In-Stock

1+ parts

$11.970

100+ parts

$10.773

1k+ parts

-

10k+ parts

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438

$11.970

$10.773

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TANS Electronics

Latvia . 7,207 parts In-Stock

1+ parts

-

100+ parts

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7,207

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Kulean Microsystems

USA . 4,929 parts In-Stock

1+ parts

-

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1k+ parts

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4,929

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SupplyDigital Components

Austria . 3,167 parts In-Stock

1+ parts

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3,167

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Problanco Electronics

Mexico . 1,567 parts In-Stock

1+ parts

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100+ parts

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1,567

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UHIMA Technologies

Türkiye . 829 parts In-Stock

1+ parts

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100+ parts

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829

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Technical Specifications

EEPROM CAT25C11GYE-1.8TE13 attributes and parameters. Explore more EEPROM devices from Onsemi

Package Body Material:

PLASTIC/EPOXY

Organization:

128X8

Maximum Seated Height:

1.2 mm

Minimum Supply Voltage (Vsup):

1.8 V

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Maximum Write Cycle Time (tWC):

10 ms

No. of Terminals:

8

Maximum Clock Frequency (fCLK):

1 MHz

No. of Words:

128 words

Terminal Position:

DUAL

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Technology:

CMOS

JESD-30 Code:

R-PDSO-G8

Package Shape:

Terminal Form:

GULL WING

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Package Code:

Width:

3 mm

Serial Bus Type:

SPI

Memory Density:

1024 bit

Memory IC Type:

JESD-609 Code:

e4

Minimum Operating Temperature:

-40 Cel

Memory Width:

8

No. of Functions:

1

Qualification:

Not Qualified

Length:

4.4 mm

No. of Words Code:

128

Nominal Supply Voltage / Vsup (V):

2.5

Parallel or Serial:

SERIAL

Terminal Pitch:

.65 mm

Temperature Grade:

Maximum Supply Voltage (Vsup):

6 V

Trade Compliance

CAT25C11GYE-1.8TE13 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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