KF406BV : Description = 400MHz-500MHz Band(150ohm) ;; Package = SC-45

KF422BV : Description = 400MHz-500MHz Band(150ohm) ;; Package = SC-45

KF930 : Description = 900MHz Band Paging System ;; Package = F-11

KIA7909F : Description = 1A 3-Terminal Voltage Regulator ;; Package = Dpak

KMP47C440BN : 4-bit Microcontrollers

KRC837U : BRTs Description = Built in Bias Resistor ;; Package = US6

KRC840U : BRTs Description = Built in Bias Resistor ;; Package = US6

KTB1469 : Description = General Purpose Transistor ;; Package = TO-220AB

KRA114 : Epitaxial Planar PNP Transistor

AM27S191SA25B3A : 16,384-bit ( 2048 X 8 ) Bipolar Prom.

BAV99SQ62702A1277 : Diode Quad Sot363. Silicon Switching Diode Array For high-speed switching applications Connected in series Internal (galvanic) isolated Diodes in one package Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, 1 �s Total power dissipation, 85 �C Junction temperature Storage temperature Symbol Value mW �C Unit V 1) Package.

BGX50A : Silicon Switching Diode Array. Bridge configuration High-speed switching diode chip Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Total power dissipation, 74 �C Junction temperature Storage temperature Symbol VR VRM IF Ptot Tj Tstg Value mW �C Unit V Thermal Resistance Junction - soldering point 1) RthJS 1For calculation of RthJA please refer.

H2N6520 : 500mA PNP Epitaxial Planar Transistor For General Purpose Applications Requiring High Breakdown Voltages.

NTQD6968R2 : Power MOSFET 6.6 Amps, 20 Volts , Package: Tssop 8, Pins=8. Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual TSSOP�8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery Micro8 Mounting Information Provided Applications Power Management in Portable and Battery�Powered Products, i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones.

SKM40GD124D : Semitrans(r)m Low Loss Igbt Modules. VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate IF = �IC IFM = �ICM IFSM I 2t RGE 20 k Tcase 25/65 �C Tcase = 25/65 �C; 1 ms per IGBT, Tcase 25 �C AC, 1 min. DIN 40 DIN IEC 68 T.1 Tcase 25/80 �C Tcase = 25/80 �C; = 10 ms; sin.; = 10 ms; 150 �C V(BR)CES VGE(th) ICES IGES VCEsat gfs CCHC Cies Coes Cres LCE td(on) tr td(off) tf Eon 5) Eoff.

SKW30N60HS : 1200V HighSpeed2 Igbt And 600V Highspeed Igbt With Antiparallel Fast Recovery EmCon™ Diode in Only One Package..

TD62105F : 7ch Darlington Sink Driver.

ZTX618 : NPN Low Sat Transistor. NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 JULY 1995 * 10A Peak pulse current * Excellent hFE characteristics up to10A (pulsed) * Extremely low saturation voltage e.g. 7mV typ. * IC cont 3.5A APPLICATIONS * Power MOSFET gate driver in conjunction with complementary ZTX718 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base.

STD845DN40 : Dual NPN High Voltage Transistors In A Single Package Dual NPN high voltage transistors in a single package.

050021R9ADZC : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.0000019 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 1.90E-6 microF ; Capacitance Tolerance: 26 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

CS2106L : CURRENT TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: CURRENT TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Standards: RoHS.

IRLI2203G-002 : 49 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0100 ohms ; Package Type: TO-220, TO-220, 3 PIN ; Number of units in IC: 1.

MSPUPS120E3 : 1 A, 20 V, SILICON, SIGNAL DIODE, DO-216AA. s: Package: ROHS COMPLIANT, PLASTIC, POWERMITE, 2 PIN ; Number of Diodes: 1 ; IF: 1000 mA.

SI1441EDH-T1-GE3 : 4000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 20 volts ; rDS(on): 0.0410 ohms ; Package Type: HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN ; Number of units in IC: 1.

SIL620-100 : 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: WRAPAROUND ; Molded / Shielded: Shielded ; Application: General Purpose, Power Choke ; Inductance Range: 10 microH ; Rated DC Current: 1200 milliamps.

10031312-01000 : DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer.

1C4464 : 9.1 V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE.

5-1614894-6 : RESISTOR, THIN FILM, 0.1 W, 0.1 %, 25 ppm, 681000 ohm, SURFACE MOUNT, 0805. s: Category / Application: General Use ; Technology / Construction: Thin Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0805, CHIP, ROHS COMPLIANT ; Resistance Range: 681000 ohms ; Tolerance: 0.1000 +/- % ; Temperature Coefficient: 25 ±ppm/°C ; Power.

8150MDM1016RTN0110 : CAP,AL2O3,15UF,250VDC,20% -TOL,20% +TOL. s: Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic.