IRF2204 : 40V Single N-channel HexFET Power MOSFET in a TO-220AB Package

IRS21171STRPBF : Pmic - Mosfet, Bridge Driver - External Switch Integrated Circuit (ics) Non-Inverting Digi-Reel� 290mA 10 V ~ 20 V; IC DRIVER HI SIDE SGL 600V 8SOIC Specifications: Configuration: High-Side ; Voltage - Supply: 10 V ~ 20 V ; Current - Peak: 290mA ; Delay Time: 160ns ; Package / Case: 8-SOIC (0.154", 3.90mm Width) ; Packaging: Digi-Reel� ; Number of Outputs: 1 ; Input Type: Non-Inverting ; Number of Configurations: 1 ; Operating Temperature: -40�C

IRFR3504TRRPBF : Fet - Single Discrete Semiconductor Product 30A 40V 140W Surface Mount; MOSFET N-CH 40V 30A DPAK Specifications: Mounting Type: Surface Mount ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 40V ; Current - Continuous Drain (Id) @ 25� C: 30A ; Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 30A, 10V ; Input Capacitance (Ciss) @ Vds: 2150pF @ 25V ; Power - Max: 140W ; Packaging: Ta

IRH4130PBF : 14 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.2000 ohms ; Number of units in IC: 1

IRHM3260UPBF : 35 A, 200 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 0.0770 ohms ; Package Type: HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN ; Number of units in IC: 1

IRKKF200-08HJS20 : 314 A, 200 V, SCR Specifications: Thyristor Type: SCR ; Pin Count: 5 ; VDRM: 200 volts ; VRRM: 200 volts ; IT(RMS): 314 amps

OM1575-ASCZ : 3.2 A SWITCHING REGULATOR, 62 kHz SWITCHING FREQ-MAX, MSFM5 Specifications: Configuration / Function: Buck ; Package Type: Other, MO-078, METAL PACKAGE-5 ; Life Cycle Stage: ACTIVE ; IOUT: 3.2 amps ; VIN: 12 volts ; fsw: 62 kHz ; Operating Temperature: -55 to 150 C (-67 to 302 F)

SC180R015S5R : 15 V, SILICON, RECTIFIER DIODE Specifications: Rectifier Configuration / Technology: Schottky ; Package: WAFER ; Number of Diodes: 1 ; VRRM: 15 volts

SD153R08S10MV : 150 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AC Specifications: Configuration: Single ; Pin Count: 1 ; Number of Diodes: 1 ; IF: 150000 mA ; trr: 1 ns ; VRRM: 800 volts ; RoHS Compliant: RoHS

200HF40MSVPBF : 200 A, 400 V, SILICON, RECTIFIER DIODE, DO-205AC Specifications: Number of Diodes: 1 ; VRRM: 400 volts ; IF: 200000 mA ; RoHS Compliant: RoHS

5962-9462701HZA : 1-OUTPUT 30 W DC-DC REG PWR SUPPLY MODULE Specifications: Package Type: Other, FM-10 ; Output Voltage: 11.88 to 12.12 volts ; Input Voltage: 16 to 40 volts ; Output Power: 30 watts (0.0402 HP) ; Operating Temperature: -55 to 125 C (-67 to 257 F)

2MBI300NT-120-02 : Igbt Module.

FS50KMJ-06 : Type = Trench Gate ;; Voltage = 60V ;; Rdson = 20 ;; Package = Obsolete ;; Drive Voltage = 4.

FT1500AU-240 : Style = Phase Control ;; Type = Disc/hockey Puk ;; Voltage = 12000V ;; Current = 1500A ;; Circuit Configuration = Asymmetric.

MGP7N60E : Medium Voltage 600-1199 Volts. Insulated Gate Bipolar Transistor N-channel.

STB4NC60 : Medium Voltage. N-channel 600V 1.8 Ohm 4.2A D2PAK Powermesh ii MOSFET.

STB8NC50-1 : Medium Voltage. N-channel 500V - 0.7 Ohm - 8A TO-220/TO-220FP/I2PAK Powermesh ii MOSFET.

AAT7357 : 20V P-Channel Power MOSFET. The is a low threshold dual MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTechTM's ultra high density MOSFET process and space saving small outline Jlead package, performance superior to that normally found a TSSOP-8 footprint has been squeezed into the footprint a TSOPJW-8 package. Applications Battery Packs Cellular & Cordless.

05002180AKZC : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.000018 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 1.80E-5 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

FQP7N10J69Z : 7.3 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.3500 ohms ; Package Type: TO-220, TO-220, 3 PIN ; Number of units in IC: 1.

GKG10068-25 : CAP,CERAMIC,3P-10PF,100VDC. s: Dielectric: Ceramic Composition ; Capacitance Type: Variable.

GRM0225C0J101GD05B : CAPACITOR, CERAMIC, MULTILAYER, 6.3 V, C0G, 0.0001 uF, SURFACE MOUNT, 01005. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.00E-4 microF ; Capacitance Tolerance: 2 (+/- %) ; WVDC: 6.3 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface.

MA4P504-1056 : SILICON, PIN DIODE. s: Package: HERMETIC SEALED, CASE 1056, 2 PIN ; Number of Diodes: 1 ; PD: 300 milliwatts.

MIC24412-0128 : DATACOM TRANSFORMER FOR LAN; 10/100 BASE-T APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: 0 to 70 C (32 to 158 F).

ROX1SJ820K : RESISTOR, METAL OXIDE FILM, 1 W, 5 %, 300 ppm, 820000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: MetalOxide ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED, ROHS COMPLIANT ; Resistance Range: 820000 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 300 ±ppm/°C ; Power Rating: 1 watts.

SR225E103MARTR2 : CAPACITOR, CERAMIC, MULTILAYER, 50 V, Z5U, 0.01 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 0.0100 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 50 volts ; Mounting Style:.

TK16J55D : 16 A, 550 V, 0.37 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 550 volts ; rDS(on): 0.3700 ohms ; Package Type: ROHS COMPLIANT, 2-16C1B, SC-65, 3 PIN ; Number of units in IC: 1.

U443-4 : 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-78. s: Polarity: N-Channel ; PD: 500 milliwatts ; Package Type: HERMETIC SEALED, MO-002AG, 7 PIN ; Number of units in IC: 2.