CMOS and TTL Compatible Inputs and Outputs Access Times +5V �10% Supply Automatic Page Write Operation Page Write Cycle Time: 10ms Max Data Retention Ten Years Minimum Low Power CMOS Data Polling for End of Write Detection Industry Standard Pinouts

66 Pin, 1.08" x.160" PGA Type, No Shoulder, Aeroflex code# "P3" 66 Pin, 1.08" x.185" PGA Type, With Shoulder, Aeroflex code# x.88" x.200" Dual-Cavity Small Outline Gull Wing, Aeroflex code# "F2" (Drops into the 68 Lead JEDEC.99"SQ CQFJ footprint)

MIL-PRF-38534 Compliant MCMs Available Hardware and Software Data Protection Internal Decoupling Capacitors for Low Noise

Block Diagram � PGA Type Package (P3,P7) & CQFP (F2) The is a high speed, 4 megabit, CMOS EEPROM multichip module (MCM) designed for full temperature range military, space, or high reliability applications. The MCM can be organized x 16 bits x 8 bits device and is input and output CMOS and TTL compatible. Writing is executed when the write enable (WE) and chip enable (CE) inputs are low and output enable (OE) is high. Reading is accomplished when WE is high and CE and OE are both low. Access times grades of 300ns are standard. The ACT�E128K32 is packaged in a choice of hermetically sealed co-fired ceramic packages, a 66 pin, 1.08" sq PGA lead,.88" sq gullwing CQFP. The device operates over the temperature range to +125�C and military environment.

A0�16 Address Inputs WE1-4 Write Enables OE CE1-4 VCC GND Output Enable Chip Enables Power Supply Ground

Parameter Operating Temperature Storage Temperature Range All Input Voltages with respect to Ground All Output Voltages with respect to Ground Voltage on OE and A9 with respect to Ground Symbol TC TSTG VG Range to +13.5 Units �C V

NOTICE: Stresses above those listed under "Absolute Maximums Rating" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Symbol VCC VIH VIL TC Parameter Power Supply Voltage Input High Voltage Input Low Voltage Case Operating Temperature (Military) Minimum Maximum +5.5 VCC Units V �C

Parameter � A16 Capacitance Output Enable Capacitance Write Enable Capacitance Chip Enable Capacitance � I/O31 Capacitance

Parameter Input Leakage Current Output Leakage Current Operating Supply Current x 32 Mode Operating Supply Current Output Low Voltage Output High Voltage

OE = VIH, VOUT = GND to VCC ICC CE = VIL, OE = VIH, = 5Mhz ISB VOL VOH CE = VIH, OE = VIH, = 5Mhz IOL = +2.1mA, VCC = 4.5V IOH = �400�A, VCC 4.5V 2.4

Parameter Write Cycle Time Address Set-up Time Write Pulse Width (WE or CE) Chip Enable Set-up Time Address Hold Time Data Hold Time Chip Enable Hold Time Data Set-up Time Output Enable Set-up Time Output Enable Hold Time

Read Cycle Parameter Read Cycle Time Address Access Time Chip Enable Access Time Output Hold From Address Change, or CE Output Enable to Output Valid Chip Enable OE to High Z Output

Parameter Write Cycle Time Address Set-up Time Address Hold Time , See Note 1 Data Set-up Time Data Hold Time Write Pulse Width Byte Load Cycle Time Write Pulse Width High Note 1 � Page Address must remain valid for duration of write cycle.