CM1425-01CS by Onsemi | Data Line Filters | Partstack

CM1425-01CS

Onsemi

CM1425-01CS by Onsemi

DATA LINE FILTER; Maximum DC Resistance: 120 ohm; Manufacturer Series: CM1425; Additional Features: PI-TYPE CIRCUIT; Terminal Finish: TIN LEAD; Minimum Operating Temperature: -40 Cel;

Median Price

-

Lifecycle Status

Discontinued

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< 1k

CM1425-01CS by Onsemi
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Technical Specifications

Data Line Filters CM1425-01CS attributes and parameters. Explore more Data Line Filters devices from Onsemi

Packing Method:

TAPE AND REEL

Dimensions:

L2.515XB1.015XH0.65 (mm)/L0.099XB0.04XH0.026 (inch)

Approvals (V):

IEC

Maximum DC Resistance:

Output Impedance (ohm):

50 OHM

Mounting Type:

SURFACE MOUNT

Terminal Finish:

TIN LEAD

JESD-609 Code:

e0

Minimum Operating Temperature:

-40 Cel

No. of Functions:

4

Length:

2.515 mm

Additional Features:

PI-TYPE CIRCUIT

Capacitance:

20 uF

Filter Type:

Maximum Operating Temperature:

85 Cel

Height:

.65 mm

Manufacturer Series:

CM1425

Trade Compliance

CM1425-01CS Filters trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8504.50.80.00

SB

8504.50.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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CM1405-01CP

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