Details, datasheet, quote on part number: STP5NB80FP
| Part | STP5NB80FP |
| Category | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description | N-channel 800V - 1.8 Ohm - 5A - TO-220/TO-220FP Powermesh MOSFET |
| Company | ST Microelectronics, Inc. |
| Datasheet | Download STP5NB80FP Datasheet |
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| Cross ref. | Similar parts: FQPF5N80 |
| Quote |
| Features, Applications |
TYPICAL RDS(on) = 1.8 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE Symb DS V DGR ) P tot dv/dt( 1) V ISO tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS ) G ate-source Voltage Drain Current (continuous) o C Drain Current (continuous) 100 oC Drain Current (pulsed) T otal Dissipation 25 oC Derating F actor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage T emperature Max. Operating Junction T emperature to 150 TO-220 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max TO220-FP 3.1Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting D = IAR , VDD 50 V) Min. Value Max. Value 5 300 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase 25 oC unless otherwise specified) OFFSymbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions = 0 Min. T yp. Max. Unit �A nA Zero G ate Voltage DS = Max Rating Drain Current DS = Max Rating Gate-body Leakage Current (VDS 30 V Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V GS Test Con ditions A 5 Min. 3 T yp. 4 1.8 Max. 5 2.2 Unit V A Symbo iss s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse T ransfer Capacitance Test Con ditions DS > ID(o x R DS(on )ma = 25 MHz = 0 Min. 1.5 T yp. Max. Unit S pF Symbo l t d(on) Q gd Parameter Turn-on delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Con ditions 3 A VGS 10 4.7 (see test circuit, figure 10 V Min. T yp. Max. Unit ns nC Symbo l tr (Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Con ditions 10 V (see test circuit, figure 5) Min. T yp. 14 21 Max. Unit ns Symbo l ISD I SDM rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current 5.6 A di/dt 100 V (see test circuit, figure 5) Test Con ditions Min. T yp. Max. 20 1.6 Unit �C A Pulsed: Pulse duration = 300 �s, duty cycle 1.5 % Pulse width limited by safe operating area |
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